Furnace for seeded sublimation of wide band gap crystals

Patent metadata

Field	Value
Publication number	US-10344396-B2
Application number	US-201615548082-A
Country	US
Kind code	B2
Filing date	Jan 29, 2016
Priority date	Feb 5, 2015
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.

First claim

The invention claimed is:

1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth, comprising:
a quartz vacuum chamber;
a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;
a reaction cell comprising a container configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as reaction cell height along its axis of rotational symmetry;
an arrangement of insulation around the reaction cell configured for generating a thermal gradient inside the reaction cell;
a support for placing the reaction cell inside the quartz vacuum chamber;
wherein the cylindrical RF induction coil is configured for generating an electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the cylindrical RF induction coil, coaxially to the quartz vacuum chamber, and at the center of the coil with respect to its axial length; and,
wherein a ratio of height of the cylindrical RF induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.

2. The apparatus of claim 1 , wherein the ratio of the height of the cylindrical RF induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.8 to 4.0.

3. The apparatus of claim 1 , wherein the reaction cell and the arrangement of insulation are made of graphite.

4. The apparatus of claim 1 , further comprising a mechanism for forced air flow around the exterior wall of the quartz vacuum chamber.

5. The apparatus of claim 1 , wherein the height of the cylindrical RF induction coil, measured along the axis of rotational symmetry, is smaller than height of the quartz vacuum chamber, measured along the axis of rotational symmetry.

6. The apparatus of claim 5 , wherein a ratio of the height of the quartz vacuum chamber to height of the reaction cell ranges from 5.9 to 6.5.

7. The apparatus of claim 5 , wherein the ratio of the height of the quartz vacuum chamber to the reaction cell height ranges from 7.1 to 7.8.

8. The apparatus of claim 1 , wherein the cylindrical RF induction coil has an internal diameter of from 330 to 725 mm.

9. The apparatus of claim 1 , further comprising a water jacket positioned on exterior wall of the quartz vacuum chamber.

10. The apparatus of claim 1 , wherein the support is configured so that it does not absorb energy from the electromagnetic field and for supporting the reaction cell inside the quartz vacuum chamber, such that the reaction cell is positioned axially centrally to the axis of rotational symmetry.

11. The apparatus of claim 10 , wherein the ratio ranges from 2.8 to 4.0.

12. The apparatus of claim 11 , wherein the cylindrical RF coil has internal diameter of from 330 to 550 mm.

Assignees

• Dow Corning
• Dow Silicones Corp

Inventors

• Loboda Mark

Classifications

• C30B29/36

  Carbides · CPC title

• C30B30/04

  using magnetic fields · CPC title

• C30B23/06 Primary

  Heating of the deposition chamber, the substrate or the materials to be evaporated · CPC title

• C30B23/00 Primary

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C30B30/00

  Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions · CPC title