Methods and devices for growing crystals with high uniformity without annealing

Patent metadata

Field	Value
Publication number	US-11655557-B2
Application number	US-202117216659-A
Country	US
Kind code	B2
Filing date	Mar 29, 2021
Priority date	Jun 5, 2020
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

First claim

What is claimed is:

1. A crystal growth device, comprising a temperature field device and a feeding component configured to feed reactant supplements into a crucible, wherein
the crucible includes an inner crucible and an outer crucible, the inner crucible and the outer crucible including a sealed gap where a feed port used to receive reactant supplements and an exhaust port used to exhaust gas are provided;
the temperature field device includes a bottom plate, a cover plate, a first drum, a second drum, and a filler, wherein
the bottom plate is mounted on a bottom of the temperature field device and covers an open end of the first drum,
the cover plate is mounted on a top of the temperature field device and covers the other open end of the first drum,
the second drum is mounted inside the first drum, and
the filler is filled in the second drum and/or a space between the second drum and the first drum.

2. The crystal growth device of claim 1 , wherein the gap between the inner crucible and the outer crucible forms a reactant melting zone.

3. The crystal growth device of claim 1 , wherein a bottom of an outer side of the inner crucible includes a plurality of openable and closable through holes for feeding the received reactant supplements into the inner crucible.

4. The crystal growth device of claim 1 , wherein the temperature field device further includes a heater, the heater being mounted above the crucible.

5. The crystal growth device of claim 4 , wherein
the heater is made of at least one of iridium, platinum, molybdenum, tungsten, graphite, or a high-temperature-resistant material with a high melting point which can be heated by electromagnetic induction;
an inner diameter of the heater is 40-240 mm; and
a height of the heater is 2-200 mm.

6. The crystal growth device of claim 1 , wherein the feeding component includes a weighing assembly, a transfer assembly, and a control assembly, wherein
the weighing assembly is configured to weigh the reactant supplements based on a supplement weight of the reactant supplements determined by the control assembly;
the transfer assembly is configured to transfer the reactant supplements weighed by the weighing assembly to the crucible; and
the control assembly is configured to:
obtain a weight of a crystal being grown;
determine the supplement weight of the reactant supplements at least based on the weight of the crystal being grown and a ratio among reactants for growing the crystal;
obtain a weight of the reactant supplements weighed by the weighing assembly in real-time; and
control the transfer assembly to transfer the reactant supplements from the weighing assembly to the crucible when the weight of the reactant supplements weighed by the weighing assembly is equal to the supplement weight of the reactant supplements.

7. The crystal growth device of claim 6 , wherein
the feeding component further includes a holding assembly configured to hold the reactant supplements, and
the control assembly is further configured to:
control the holding assembly to transfer the reactant supplements to the weighing assembly when the weight of the reactant supplements weighed by the weighing assembly is less than the supplement weight of the reactant supplements; and
control the holding assembly to stop transferring the reactant supplements to the weighing assembly when the weight of the reactant supplements weighed by the weighing assembly is equal to the supplement weight of the reactant supplements.

8. The crystal growth device of claim 1 , wherein the exhaust port is located at an opposite position of the feed port.

9. The crystal growth device of claim 1 , wherein the filler includes a granular shape filler.

10. The crystal growth device of claim 1 , wherein the filler includes a felt shape filler.

11. The crystal growth device of claim 1 , wherein the filler includes at least one of a zircon sand, a zirconia particle, or an alumina particle.

12. The crystal growth device of claim 1 , wherein a particle size of the filler is 5-200 mesh.

13. The crystal growth device of claim 1 , wherein the crystal growth device further includes a furnace, wherein
the furnace is open; and
the temperature field device is sealed.

Assignees

• Meishan Boya Advanced Mat Co Ltd

Inventors

• Wang Yu
• Guan Weiming
• Liang Zhenxing
• Li Min

Classifications

• C30B29/20

  Aluminium oxides · CPC title

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

• C30B29/22

  Complex oxides · CPC title

• C30B15/02 Primary

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C30B29/34

  Silicates · CPC title