Methods for forming layers on semiconductor substrates
US-9217201-B2 · Dec 22, 2015 · US
US2016348240A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016348240-A1 |
| Application number | US-201515111541-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 6, 2015 |
| Priority date | Jan 27, 2014 |
| Publication date | Dec 1, 2016 |
| Grant date | — |
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Embodiments described herein generally relate to a batch processing chamber. The batch processing chamber includes a lid, a chamber wall and a bottom that define a processing region. A cassette including a stack of susceptors for supporting substrates is disposed in the processing region. The edge of the cassette is coupled to a plurality of shafts and the shafts are coupled to a rotor. During operation, the rotor rotates the cassette to improve deposition uniformity. A heating element is disposed on the chamber wall and a plurality of gas inlets is disposed through the heating element on the chamber wall. Each gas inlet is substantially perpendicular to the chamber wall.
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1 . A rotating batch processing chamber, comprising: a chamber wall; a bottom; a lid, wherein the chamber wall, the bottom and the lid define a processing region; a cassette configured to hold a plurality of substrates disposed in the processing region; a plurality of shafts coupled to an edge of the cassette; a rotor coupled to the plurality of shafts; a stator coupled to the rotor; and a first heating member disposed adjacent to the chamber wall. 2 . The rotating batch processing chamber of claim 1 , wherein the first heating member includes a plurality of infrared lamps. 3 . The rotating batch processing chamber of claim 2 , wherein the chamber wall is cylindrical, the plurality of infrared lamps are circular and the plurality of infrared lamps surrounds the chamber wall. 4 . The rotating batch processing chamber of claim 1 , further comprising a second heating element disposed above and/or below the cassette. 5 . The rotating batch processing chamber of claim 1 , further comprising a reflector surrounding the first heating element. 6 . A rotating batch processing chamber, comprising: a chamber wall; a bottom; a lid, wherein the chamber wall, the bottom and the lid define a processing region; a cassette configured to hold a plurality of substrates disposed in the processing region; a plurality of shafts coupled to an edge of the cassette; a rotor coupled to the plurality of shafts; a stator coupled to the rotor; a first heating member disposed adjacent to the chamber wall; and a plurality of gas inlets disposed through the first heating member on the chamber wall, wherein each of the plurality of gas inlets is substantially perpendicular to the chamber wall. 7 . The rotating batch processing chamber of claim 6 , wherein the first heating member includes a plurality of infrared lamps. 8 . The rotating batch processing chamber of claim 7 , wherein the chamber wall is cylindrical, the plurality of infrared lamps are circular and the plurality of infrared lamps surrounds the chamber wall. 9 . The rotating batch processing chamber of claim 6 , wherein the first heating member includes one or more inductive heaters. 10 . The rotating batch processing chamber of claim 6 , further comprising a second heating element disposed above and/or below the cassette. 11 . The rotating batch processing chamber of claim 6 , wherein the rotor and the stator are permanent magnets, and the rotor is magnetically coupled to the stator. 12 . The rotating batch processing chamber of claim 6 , further comprising a linear arc motor coupled to the plurality of shafts, wherein the linear arc motor includes the rotor and the stator. 13 . A rotating batch processing chamber, comprising: a chamber wall; a bottom; a lid, wherein the chamber wall, the bottom and the lid define a processing region; a cassette configured to hold a plurality of substrates disposed in the processing region; a first heating member disposed adjacent to the chamber wall; a plurality of gas inlets disposed through the first heating member on the chamber wall, wherein each of the plurality of gas inlets is perpendicular to the chamber wall; a chamber liner disposed between the cassette and the chamber wall; and a plurality of gas lines disposed between the chamber liner and the chamber wall, wherein each of the plurality of gas lines is substantially parallel to the chamber wall. 14 . The rotating batch processing chamber of claim 13 , wherein the first heating member includes a plurality of infrared lamps. 15 . The rotating batch processing chamber of claim 13 , further comprising a second heating element disposed above and/or below the cassette.
Vertical transfer of a batch of workpieces · CPC title
characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title
mainly by radiation · CPC title
the substrate being rotated · CPC title
Deposition of silicon only · CPC title
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