Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films

Patent metadata

Field	Value
Publication number	US-9371579-B2
Application number	US-201314062648-A
Country	US
Kind code	B2
Filing date	Oct 24, 2013
Priority date	Oct 24, 2013
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

A thin layer of a silicon-carbon-containing film is deposited on a substrate by generating hydrogen radicals from hydrogen gas supplied to a radicals generation chamber, supplying the hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multiport gas distributor, and reacting the hydrogen radicals therein with an organosilicon reactant introduced into the substrate processing chamber concurrently. The hydrogen radicals are allowed to relax into a ground state in a radicals relaxation zone within the substrate processing chamber before reacting with the organosilicon reactant.

First claim

The invention claimed is:

1. A method for depositing a silicon-carbon-containing film on a substrate, the method comprising:
providing a substrate in a processing chamber;
introducing a flow of hydrogen gas into a plasma chamber that is separate from the processing chamber and fluidly coupled therewith via a gas distributor, the gas distributor having a plurality of through-holes;
exciting at least a portion of the hydrogen gas within the plasma chamber to dissociate the hydrogen radicals and form excited hydrogen radicals;
directing a flow of the excited hydrogen radicals through the gas distributor into a region adjacent to the gas distributor in an interior of the processing chamber; and
directing a flow of an organosilicon reactant into a chemical vapor deposition zone, wherein the chemical vapor deposition zone is defined between the substrate and the region adjacent to the gas distributor, wherein substantially all of the excited hydrogen radicals transition into relaxed hydrogen radicals without recombining after flowing through the gas distributor and the region, at least some of the relaxed hydrogen radicals flowing from the region into the chemical vapor deposition zone concurrent with the flow of the organosilicon reactant and reacting therein with some of the organosilicon reactant, thereby depositing a silicon-carbon-containing film on the substrate.

2. The method of claim 1 , in which the organosilicon reactant is directed via reactant openings into the chemical vapor deposition zone, and in which the region is entirely contained in a space defined between the gas distributor and the reactant openings.

3. The method of claim 2 , in which the reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction parallel with a flow path of the excited hydrogen radicals.

4. The method of claim 2 , in which the reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction intersecting with a flow path of the excited hydrogen radicals.

5. The method of claim 1 , in which a size of the region is between about 0.5 and about 5 inches.

6. The method of claim 1 , in which the plurality of through-holes in the gas distributor are arranged as an array of regularly spaced apart gas ports.

7. The method of claim 1 , further comprising removing excess organosilicon reactant and hydrogen gas from the processing chamber by evacuation or displacement purging or both via a gas outlet.

8. The method of claim 1 , in which a mean residence time of excited hydrogen radicals within the gas distributor is greater than about 1×10 −3 seconds.

9. The method of claim 1 , in which a mean residence time of gas within the region is more than about 1×10 −3 seconds.

10. The method of claim 1 , in which the through-holes in the gas distributor have an axial length to diameter ratio in a range of about 3:1 to 10:1.

11. The method of claim 1 , in which introducing a flow of hydrogen gas includes introducing a gas mixture of hydrogen gas and helium gas, the gas mixture including between about 1 and about 17 volume percent hydrogen gas.

12. The method of claim 1 , in which the organosilicon reactant is selected from the group consisting of siloxanes, silanes, alkyl silanes, alkoxy silanes, and amino silanes.

13. The method of claim 1 , further comprising directing a gas flow path of the excited hydrogen radicals through an ion filter or a photon filter or both before directing the excited hydrogen radicals through the gas distributor and into the region.

14. The method of claim 1 , in which the mass fraction of the organosilicon reactant in the region in a vicinity of the gas distributor is about 0.1 or less.

15. A method for depositing a silicon-carbon-containing film on a substrate, the method comprising:
supporting a substrate in a processing chamber;
introducing a flow of a gas mixture of dilute hydrogen gas in helium gas into a plasma chamber that is separate from the processing chamber and fluidly coupled therewith via a gas distributor, the gas distributor having a plurality of through-holes;
exciting at least a portion of the hydrogen gas within the plasma chamber to dissociate the hydrogen radicals and form excited hydrogen radicals in the gas mixture;
directing a flow of the excited hydrogen radicals in the gas mixture through the gas distributor into a region adjacent to the gas distributor in an interior of the processing chamber; and
directing a flow of an organosilicon reactant into a chemical vapor deposition zone, wherein the chemical vapor deposition zone is defined between the substrate and the region adjacent to the gas distributor, wherein substantially all of the excited hydrogen radicals transition into relaxed hydrogen radicals without recombining after flowing through the gas distributor and the region, at least some of the organosilicon reactant reacting with at least some relaxed hydrogen radicals flowing from the region concurrent with the flow of the organosilicon reactant, thereby depositing a silicon-carbon-containing film on the substrate.

16. The method of claim 15 , in which introducing a flow of a gas mixture of dilute hydrogen gas in helium gas includes introducing a dilute hydrogen gas mixture including between about 1 and about 17 volume percent hydrogen gas in helium.

17. The method of claim 15 , in which a mean residence time of excited hydrogen radicals within the gas distributor is greater than about 1×10 −3 seconds, and in which a mean residence time of gas within the region is more than about 1×10 −3 seconds.

18. The method of claim 15 , in which the organosilicon reactant is directed via reactant openings into the chemical vapor deposition zone, and in which the region is entirely contained in a space defined between the gas distributor and the reactant openings.

19. The method of claim 18 , in which the reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction parallel with a flow path of the excited hydrogen radicals.

20. The method of claim 18 , in which the reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction intersecting with a flow path of the excited hydrogen radicals.

Assignees

• Lam Res Corp
• Lam Res Corp

Inventors

• Varadarajan Bhadri N
• Gong Bo

Classifications

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• C23C16/452 Primary

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title

• C23C16/325 Primary

  Silicon carbide · CPC title