Composite film, preparation method thereof and light-emitting device
US-2025212594-A1 · Jun 26, 2025 · US
AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C16/306 |
| Official title | {AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te} |
| Display label | AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te |
| Total patents | 46 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 8 |
| 2017 | 4 |
| 2018 | 5 |
| 2019 | 7 |
| 2020 | 1 |
| 2021 | 5 |
| 2022 | 5 |
| 2023 | 2 |
| 2024 | 4 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of producing large EMI shielded GaAs infrared windows
US-12302542-B2 · May 13, 2025 · US
Deposition of transition metal-comprising material
US-2025122612-A1 · Apr 17, 2025 · US
Deposition of transition metal—comprising material
US-12209305-B2 · Jan 28, 2025 · US
Powder-atomic-layer-deposition device with knocker
US-12123092-B2 · Oct 22, 2024 · US
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS
US-2024188261-A1 · Jun 6, 2024 · US
Method and use related to a film and a film
US-2024158914-A1 · May 16, 2024 · US
Method of forming transition metal dichalcogenide thin film
US-11881399-B2 · Jan 23, 2024 · US
Synthesis and use of precursors for ALD of tellurium and selenium thin films
US-11814400-B2 · Nov 14, 2023 · US
Method of forming transition metal dichalcogenide thin film
US-2023024913-A1 · Jan 26, 2023 · US
Atomic layer deposition method of metal (ii), (0), or (iv) containing film layer
US-2022356576-A1 · Nov 10, 2022 · US
Powder-atomic-layer-deposition device with knocker
US-2022341036-A1 · Oct 27, 2022 · US
Method of forming transition metal dichalcogenide thin film
US-11476117-B2 · Oct 18, 2022 · US
Deposition of transition metal -comprising material
US-2022251701-A1 · Aug 11, 2022 · US
Method for depositing a CdTe layer on a substrate
US-11217720-B2 · Jan 4, 2022 · US
Synthesis and use of precursors for ald of tellurium and selenium thin films
US-2021347795-A1 · Nov 11, 2021 · US
Transistor device with sinker contacts and methods for manufacturing the same
US-2021272842-A1 · Sep 2, 2021 · US
Synthesis and use of precursors for ALD of tellurium and selenium thin films
US-11072622-B2 · Jul 27, 2021 · US
Transistor device with sinker contacts and methods for manufacturing the same
US-11037816-B2 · Jun 15, 2021 · US
Method of forming transition metal dichalcogenide thin film
US-2021020438-A1 · Jan 21, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C16/306?
- CPC C23C16/306 is the Cooperative Patent Classification code for “AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te.”
- How many patents are filed under CPC C23C16/306 (AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te)?
- Our database includes 46 publications tagged with this CPC code.
- Is patent activity under CPC C23C16/306 growing?
- Publication counts under this code: 4 in 2024 vs 4 in 2025 (latest complete years).