Deposition of transition metal—comprising material

Patent metadata

Field	Value
Publication number	US-12209305-B2
Application number	US-202217666903-A
Country	US
Kind code	B2
Filing date	Feb 8, 2022
Priority date	Feb 11, 2021
Publication date	Jan 28, 2025
Grant date	Jan 28, 2025

Abstract

The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

First claim

The invention claimed is:

1. A method of forming a transition metal comprising material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor comprising a transition metal compound in the reaction chamber; and
providing a second precursor in the reaction chamber,
wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and
wherein the second precursor comprises radicals comprising tellurium, arsenic or bismuth.

2. The method of claim 1 , wherein the adduct ligand is a bidentate nitrogen-comprising adduct ligand.

3. The method of claim 2 , wherein the bidentate nitrogen-comprising adduct ligand comprises two nitrogen atoms, each of nitrogen atoms bonded to at least one carbon atom.

4. The method of claim 1 , wherein the transition metal is heteroleptic transition metal precursor.

5. The method of claim 4 , wherein the heteroleptic transition metal precursor is selected from a group consisting of Co(btsa) 2 (THF)-comprising transition metal precursor, Ni(btsa) 2 (THF)-comprising transition metal precursor.

6. The method of claim 1 , wherein the transition metal is selected from a group consisting of Co and Ni.

7. The method of claim 1 , wherein the transition metal halide comprises a transition metal chloride.

8. The method of claim 1 , wherein the transition metal compound comprises one of CoCl 2 (TMEDA) and NiCl 2 (TMPDA).

9. The method of claim 1 , wherein the second precursor comprises tellurium radicals.

10. The method of claim 9 , wherein the transition metal precursor comprises a heteroleptic transition metal precursor comprising a tetrahydrofurane (THF) ring attached to a transition metal atom and two bis(trimethylsilyl)amide ligands attached to the transition metal atom through nitrogen atoms.

11. The method of claim 9 , wherein the second precursor is formed from a compound selected from the group consisting of H 2 Te, (CH 3 ) 2 Te and Te(SiEt 3 ) 2 .

12. The method of claim 1 , wherein the second precursor is formed from arsenic.

13. The method of claim 1 , wherein the second precursor comprises an alkyl group.

14. The method of claim 1 , wherein the cyclical deposition process comprises providing the transition metal precursor and the second precursor alternately and sequentially in the reaction chamber, and wherein a temperature is less than 250° C.

15. The method of claim 1 , wherein the substrate comprises a first surface comprising a first material and a second surface comprising a second material, wherein the transition metal-comprising material is selectively deposited on the first surface relative to the second surface.

16. The method of claim 15 , wherein the first material comprises a first dielectric material or a first metal, and the second material comprises a second dielectric material or a second metal.

17. The method of claim 15 , wherein the first material comprises native silicon oxide, thermal silicon oxide, soda lime glass, a metal, a metal sulfide, or a metal nitride.

18. The method of claim 15 , wherein the second material comprises Si—H, a metal oxide, or a metal sulfide.

19. A method of forming a transition metal-comprising material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor comprising a transition metal halide bound to an adduct ligand in the reaction chamber;
providing a second precursor in the reaction chamber; and
contacting the transition metal-comprising material with a reducing agent thereby forming an elemental transition metal,
wherein the second precursor comprises radicals comprising tellurium, arsenic or bismuth.

20. The method of claim 19 , wherein the reducing agent precursor comprises at least one of forming gas (H 2 +N 2 ), ammonia (NH 3 ), an ammonia (NH 3 ) plasma, hydrazine (N 2 H 4 ), molecular hydrogen (H 2 ), hydrogen atoms (H), a hydrogen plasma, hydrogen radicals, hydrogen excited species, alcohols, aldehydes, carboxylic acids, boranes, or amines, tertiary butyl hydrazine (C 4 H 12 N 2 ), silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), germane (GeH 4 ), digermane (Ge 2 H 6 ), borane (BH 3 ), and diborane (B 2 H 6 ).

Assignees

• Asm Ip Holding Bv

Inventors

• Mattinen Miika
• Hatanpää Timo
• Ritala Mikko
• Leskelä Markku

Classifications

• C23C16/08

  from metal halides · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/305 Primary

  Sulfides, selenides, or tellurides · CPC title

• C23C16/04

  Coating on selected surface areas, e.g. using masks · CPC title