Method for depositing a CdTe layer on a substrate

Patent metadata

Field	Value
Publication number	US-11217720-B2
Application number	US-201716070039-A
Country	US
Kind code	B2
Filing date	Feb 3, 2017
Priority date	Feb 3, 2016
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

First claim

The invention claimed is:

1. A method of depositing a CdTe layer on a substrate within a vacuum chamber by means of close space sublimation (CSS), the method comprising:
heating the substrate, prior to the deposition process, to a coating temperature;
guiding the substrate past multiple vessels in which CdTe is sublimed are arranged in succession in a direction of movement of the substrate, wherein upstream of each of the vessels a gaseous component includes oxygen and having an elevated pressure relative to the vacuum in the vacuum chamber flows through at least one inlet against a surface of the substrate to be coated, wherein the gaseous component, which does not include CdTe vapor, is adsorbed at the surface of the substrate to be coated before the substrate is guided past the next vessel, wherein a chemical element of the gaseous component adsorbed at the surface of the substrate is intercalated into the CdTe layer formed by deposition of the CdTe in the vaporous state.

2. The method of claim 1 , wherein the gaseous component is activated by means of a plasma.

3. The method of claim 1 , wherein the CdTe vapor is activated by means of a plasma.

4. A method of depositing a CdTe layer on a substrate within a vacuum chamber by means of physical gas phase deposition, the method comprising:
heating the substrate to a coating temperature;
flowing, after the substrate is heated to the coating temperature, a gaseous component having an elevated pressure relative to the vacuum in the vacuum chamber through at least one inlet against a surface of the substrate on which the CdTe layer is to be deposited, wherein the gaseous component, which does not include CdTe vapor, is adsorbed at the surface of the substrate; and
depositing the CdTe layer on the substrate by guiding the substrate, after flowing the gaseous component against the surface of the substrate, past at least one vessel in which CdTe is converted to a vaporous state and subsequently forms the CdTe layer on the substrate, wherein a chemical element of the gaseous component adsorbed at the surface of the substrate is intercalated into the CdTe layer formed by deposition of the CdTe layer, wherein the at least one inlet includes a plurality of inlets and the at least one vessel includes multiple vessels in which CdTe is sublimed, wherein the multiple vessels are arranged in succession in a direction of movement of the substrate, and upstream of each of the vessels, the gaseous component having the elevated pressure relative to the vacuum in the vacuum chamber flows through a corresponding one of the inlets against the surface of the substrate to be coated.

5. The method of claim 4 , wherein the gaseous component comprises at least one of oxygen, nitrogen, sulfur, chlorine, fluorine, phosphorus, arsenic, antimony, bismuth, or tellurium.

6. The method of claim 4 , wherein the substrate is guided repeatedly past the at least one vessel.

7. The method of claim 4 , wherein the gaseous component is activated by means of a plasma.

8. The method of claim 4 , wherein the CdTe layer is deposited by means of close space sublimation (CSS).

9. The method of claim 4 , wherein the CdTe vapor is activated by means of a plasma.

10. The method of claim 4 , wherein the gaseous component includes oxygen.

Assignees

• Fraunhofer Ges Forschung
• Ctf Solar Gmbh

Inventors

• Morgner Henry
• Metzner Christoph
• Hirsch Daniel
• Zywitzki Olaf
• Decker Ludwig
• Werner Torsten
• Siepchen Bastian
• Späth Bettina
• Velappan Krishnakumar
• Kraft Christian
• Drost Christian

Classifications

• H10F77/1237

  having at least three elements, e.g. HgCdTe · CPC title

• H10F39/022

  of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · CPC title

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

• H10F19/30

  comprising thin-film photovoltaic cells · CPC title

• H10F71/125 Primary

  The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · CPC title