Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus
US-9783911-B2 · Oct 10, 2017 · US
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Daikoku Hironori — Cross-Sectional Technologies
Daikoku Hironori holds 6 patents in Cross-Sectional Technologies, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Daikoku Hironori |
| Technology | Cross-Sectional Technologies |
| Patents in slice | 6 |
| Recent patents in slice | 0 |
| First year | 2016 |
| Last year | 2017 |
Representative patents
Notable publications linking Daikoku Hironori to Cross-Sectional Technologies.
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
US-9702056-B2 · Jul 11, 2017 · US
Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
US-9631295-B2 · Apr 25, 2017 · US
Recent filings
Latest patents from Daikoku Hironori in Cross-Sectional Technologies.
Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus
US-9783911-B2 · Oct 10, 2017 · US
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
US-9702056-B2 · Jul 11, 2017 · US
Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
US-9631295-B2 · Apr 25, 2017 · US
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