Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
US-9725822-B2 · Aug 8, 2017 · US
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Nogami Satoru patents in 2017
Nogami Satoru was listed as an assignee on 1 patent publication in 2017.
| Metric | Value |
|---|---|
| Company | Nogami Satoru |
| Year | 2017 |
| Patents | 1 |
Patents
Representative publications for Nogami Satoru in 2017.
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