Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph

Patent metadata

Field	Value
Publication number	US-9725822-B2
Application number	US-201113995722-A
Country	US
Kind code	B2
Filing date	Jun 29, 2011
Priority date	Dec 24, 2010
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

First claim

The invention claimed is:

1. A method for epitaxial growth of a monocrystalline silicon carbide using a feed material for epitaxial growth of a monocrystalline silicon carbide, the feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph,
wherein upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph, and
wherein an average crystallite diameter calculated from a first-order diffraction peak observed by X-ray diffraction of the surface layer and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is 700 Å or less.

2. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein a first-order diffraction peak corresponding to the (111) crystal plane is a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

3. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes at least one diffraction peak, each corresponding to one of a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane.

4. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 3 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes diffraction peaks, each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane.

5. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the sum of the intensities of first-order diffraction peaks other than a first-order diffraction peak corresponding to the (111) crystal plane is 10% or more of the sum of the intensities of all the first-order diffraction peaks.

6. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the average crystallite diameter calculated from the first-order diffraction peak observed by X-ray diffraction of the surface layer and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is 500 Å or less.

7. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 6 , wherein
upon X-ray diffraction of the surface layer a first-order diffraction peak corresponding to the (111) crystal plane and at least one first-order diffraction peak each corresponding to one of a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane are observed, and
(I 1 /I 0 ) −1 ·D 2 is equal to or smaller than 10 8 Å 2 ,

where:
I 0 represents the sum of the intensity of the first-order diffraction peak corresponding to the (111) crystal plane and the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane;
I 1 represents the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane; and
D represents the average crystallite diameter (Å) calculated from the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane.

8. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the surface layer is less than 80%.

9. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein an LO peak derived from a polycrystalline silicon carbide with a 3C crystal polymorph is observed upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm and the absolute amount of shift of the LO peak from 972 cm −1 is less than 4 cm −1 .

10. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 9 , wherein the full width at half-maximum of the LO peak is 7 cm −2 or more.

11. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the surface layer contains a polycrystalline silicon carbide with a 3C crystal polymorph in a proportion of 50% by mass or more.

12. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 11 , wherein the surface layer contains no ingredient other than the polycrystalline silicon carbide with a 3C crystal polymorph except for impurities.

13. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , the feed material including: a support member; and a polycrystalline silicon carbide film formed on the support member and forming the surface layer.

14. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 13 , wherein the polycrystalline silicon carbide film has a thickness within a range of 30 μm to 800 μm.

15. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , the feed material being formed of a polycrystalline silicon carbide substrate containing a polycrystalline silicon carbide with a 3C crystal polymorph.

16. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the feed material and a seed material including a surface layer containing silicon carbide are heated with the surface layers of the feed material and the seed material facing each other through a silicon melt layer to epitaxially grow a monocrystalline silicon carbide on the surface layer of the seed material.

17. The method for epitaxial growth of a monocrystalline silicon carbide according to claim 12 , wherein the content of impurities is 5% by mass or less.

Assignees

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi
• Toyo Tanso Co

Inventors

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi

Classifications

• C30B19/00

  Liquid-phase epitaxial-layer growth · CPC title

• C30B19/12 Primary

  characterised by the substrate · CPC title

• C30B28/12

  directly from the gas state · CPC title

• C30B29/36

  Carbides · CPC title

• Y10T428/26

  Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension · CPC title