Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Yonsei Univ Univ Industry Foundation patents
Yonsei Univ Univ Industry Foundation holds 5 patents in our database, with recent filings and technology areas summarized below.
| Metric | Value |
|---|---|
| Total patents | 5 |
| Recent patents | 0 |
| First publication | Mar 5, 2019 |
| Latest publication | Oct 13, 2020 |
Filing trend
Year-over-year patent counts for this assignee.
Recent patents
Latest publications where this party is an assignee.
Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits
US-10319425-B1 · Jun 11, 2019 · US
Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation
US-10290340-B1 · May 14, 2019 · US
Adaptive pulse generation circuits for clocking pulse latches with minimum hold time
US-10291211-B2 · May 14, 2019 · US
Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells
US-10224087-B1 · Mar 5, 2019 · US
Notable patents
Representative or frequently cited publications from precomputed assignee stats.
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits
US-10319425-B1 · Jun 11, 2019 · US
Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation
US-10290340-B1 · May 14, 2019 · US
Adaptive pulse generation circuits for clocking pulse latches with minimum hold time
US-10291211-B2 · May 14, 2019 · US
Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells
US-10224087-B1 · Mar 5, 2019 · US
Technology areas
Mapped technology topics for this assignee.
| Technology | Patents |
|---|---|
| Physics | 4 |
| Electricity | 4 |
Frequently asked questions
Answers are generated from the same data shown on this page.
- How many patents does Yonsei Univ Univ Industry Foundation have in patentsdb?
- Yonsei Univ Univ Industry Foundation is linked to 5 publications as assignee in our database.
- What technology areas does Yonsei Univ Univ Industry Foundation patent most?
- Top mapped technology areas by patent count: Physics (4); Electricity (4).
- Is Yonsei Univ Univ Industry Foundation's patent activity growing?
- In our data, assignee counts were 4 in 2019 and 1 in 2020 (lower year over year).
- What are recent patents assigned to Yonsei Univ Univ Industry Foundation?
- See the “Recent patents” section above for the latest 5 publications we attribute to this assignee.