Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
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Yonsei Univ Univ Industry Foundation — Physics
Yonsei Univ Univ Industry Foundation holds 4 patents in Physics, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Yonsei Univ Univ Industry Foundation |
| Technology | Physics |
| Patents in slice | 4 |
| Recent patents in slice | 0 |
| First year | 2019 |
| Last year | 2020 |
Representative patents
Notable publications linking Yonsei Univ Univ Industry Foundation to Physics.
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Recent filings
Latest patents from Yonsei Univ Univ Industry Foundation in Physics.
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US-10803942-B1 · Oct 13, 2020 · US
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