Light emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9997676-B2
Application number	US-201615268654-A
Country	US
Kind code	B2
Filing date	Sep 19, 2016
Priority date	May 14, 2014
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

First claim

What is claimed is:

1. A manufacturing method of a light emitting device, comprising:
providing a wavelength conversion layer;
disposing a plurality of light emitting units arranged at intervals on the wavelength conversion layer, and exposing two electrode pads of each light emitting unit;
forming a plurality of trenches on the wavelength conversion layer by removing a portion of the wavelength conversion layer, wherein the trenches are located between the light emitting units, and a depth of each trench is smaller than a thickness of the wavelength conversion layer;
forming a reflective protecting element on the wavelength conversion layer and between the light emitting units, and filling the reflective protecting element in the trenches, wherein the reflective protecting element exposes the electrode pads of the light emitting units; and
performing a cutting process by cutting the wavelength conversion layer and the reflective protecting element along the trenches to form a plurality of light emitting devices, wherein a lateral surface of each light emitting device exposes a portion of the wavelength conversion layer and a profile of each trench filled with a portion of the reflective protecting element.

2. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the depth of each trench is at least a half of the thickness of the wavelength conversion layer.

3. The manufacturing method of the light emitting device as claimed in claim 1 further comprising:
forming a light transmissible layer on the wavelength conversion layer after disposing the light emitting units arranged at intervals on the wavelength conversion layer.

4. The manufacturing method of the light emitting device as claimed in claim 1 further comprising:
forming a light transmissible layer on the wavelength conversion layer before disposing the light emitting units arranged at intervals on the wavelength conversion layer.

5. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the reflective protecting element further comprises a reflective surface in contact with the light emitting unit.

6. The manufacturing method of the light emitting device as claimed in claim 5 , wherein the reflective surface of the reflective protecting element is a flat surface or a curved surface.

7. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the wavelength conversion layer further comprises a low concentration fluorescent layer and a high concentration fluorescent layer, the light emitting units are disposed on the high concentration fluorescent layer.

Assignees

• Genesis Photonics Inc

Inventors

• Hung Cheng-Wei
• Hung Chin-Hua
• Du Long-Chi
• Chang Jui-Fu
• Kuo Po-Tsun
• Lee Hao-Chung
• Lin Yu-Feng

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W90/00

  Package configurations · CPC title