Method for manufacturing magnetic memory device

Patent metadata

Field	Value
Publication number	US-9991442-B2
Application number	US-201715415828-A
Country	US
Kind code	B2
Filing date	Jan 25, 2017
Priority date	Mar 10, 2016
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A method for manufacturing a magnetic memory device includes forming a magnetic tunnel junction layer that includes a first magnetic layer, a tunnel barrier layer, and a second magnetic layer sequentially stacked on a substrate. First line mask patterns are formed extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The magnetic tunnel junction layer is etched by a first ion-beam etch process using the first line mask patterns as an etch mask to form preliminary magnetic tunnel junctions. Second line mask patterns are formed extending in the second direction and spaced apart from each other in the first direction. The preliminary magnetic tunnel junctions are etched by a second ion-beam process using the second line mask patterns as an etch mask to form magnetic tunnel junctions.

First claim

What is claimed is:

1. A method of manufacturing a magnetic memory device, the method comprising:
forming a magnetic tunnel junction layer including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on a substrate;
forming, on the magnetic tunnel junction layer, first line mask patterns that extend in a first direction and are spaced apart from each other in a second direction that crosses the first direction;
etching the magnetic tunnel junction layer by a first ion-beam etch process using the first line mask patterns as an etch mask to form preliminary magnetic tunnel junctions that extend in the first direction;
forming, on the preliminary magnetic tunnel junctions, second line mask patterns that extend in the second direction and are spaced apart from each other in the first direction;
etching the preliminary magnetic tunnel junctions by a second ion-beam etch process using the second line mask patterns as an etch mask to form magnetic tunnel junctions,
wherein the magnetic tunnel junctions are arranged in shapes of islands along the first direction and the second direction; and
forming, after forming the preliminary magnetic tunnel junctions, an interlayer dielectric layer, wherein the interlayer dielectric layer comprises a first portion filling a gap between the preliminary magnetic tunnel junctions and a second portion positioned at a level above a top surface of the preliminary magnetic tunnel junctions, and wherein the second portion is etched to form the second line mask patterns.

2. The method of claim 1 ,
wherein the first and second directions are substantially parallel to a top surface of the substrate,
wherein the first ion-beam etch process uses first and second ion beams that are obliquely incident toward the substrate, the first and second ion beams being substantially reciprocally symmetric to a normal line that is perpendicular to the top surface of the substrate, and
wherein the second ion-beam etch process uses third and fourth ion beams that are obliquely incident toward the substrate, the third and fourth ion beams being substantially reciprocally symmetric to the normal line,
the first to fourth ion beams having different incident directions from each other.

3. The method of claim 2 , wherein a vector component of each of the incident directions of the first and second ion beams is substantially parallel to a first plane defined by the second direction and a third direction which is substantially parallel to the normal line,
wherein the incident direction of the first ion beam includes a vector component in the second direction and the incident direction of the second ion beam includes a vector component in a direction that is opposite to the second direction in a plan view of the magnetic memory device.

4. The method of claim 3 , wherein a vector component of each of the incident directions of the third and fourth ion beams is substantially parallel to a second plane defined by the third direction and the first direction,
wherein the incident direction of the third ion beam includes a vector component in the first direction and the incident direction of the fourth ion beam includes a vector component in a direction that is opposite to the first direction in a plan view of the magnetic memory device.

5. The method of claim 2 ,
wherein each of the preliminary magnetic tunnel junctions comprises first and second sidewalls facing each other in the second direction,
and comprising: forming, before forming the second line mask patterns, a first capping insulation layer on the first and second sidewalls.

6. The method of claim 5 , wherein
the first ion beam sequentially etches the first magnetic layer, the tunnel barrier layer, and the second magnetic layer to form the first sidewall, and
the second ion beam sequentially etches the first magnetic layer, the tunnel barrier layer, and the second magnetic layer to form the second sidewall.

7. The method of claim 5 ,
wherein each of the magnetic tunnel junctions comprises third and fourth sidewalls faces each other in the first direction,
and comprising forming a second capping insulation layer on the third and fourth sidewalls.

8. The method of claim 7 ,
wherein each of the magnetic tunnel junctions comprises a preliminary first magnetic pattern, a preliminary tunnel barrier pattern, and a preliminary second magnetic pattern that are respectively formed from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer,
wherein the third ion beam sequentially etches the preliminary first magnetic pattern, the preliminary tunnel barrier pattern, and the preliminary second magnetic pattern to form the third sidewall, and
wherein the fourth ion beam sequentially etches the preliminary first magnetic pattern, the preliminary tunnel barrier pattern, and the preliminary second magnetic pattern to form the fourth sidewall.

9. The method of claim 1 , further comprising:
forming, before forming the first line mask patterns, a top electrode layer on the magnetic tunnel junction layer; and
etching the top electrode layer by a first etch process using the first line mask patterns as an etch mask to form preliminary top electrode patterns,
wherein each of the preliminary top electrode patterns extends in the first direction.

10. The method of claim 9 ,
wherein the second line mask patterns are formed on the preliminary top electrode patterns,
and further comprising: etching, before performing the second ion-beam etch process, the preliminary top electrode patterns by a second etch process using the second line mask patterns as an etch mask to form top electrode patterns,
the top electrode patterns being arranged in a shape of an island along the first direction and the second direction.

11. The method of claim 10 ,
wherein each of the first and second etch processes comprises a plasma-etch process or a reactive-ion etch process.

12. A method of manufacturing a magnetic memory device, the method comprising:
forming a magnetic tunnel junction layer including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on a substrate; and
patterning the magnetic tunnel junction layer to form magnetic tunnel junctions that are arranged in a shape of an island along a first direction and a second direction that crosses the first direction,
the patterning the magnetic tunnel junction layer comprising:
performing a first ion-beam etch process that uses first line mask patterns as an etch mask on the magnetic tunnel junction layer to form preliminary magnetic tunnel junctions, wherein the first line mask patterns extend in the first direction and are arranged along the second direction;
performing a second ion-beam etch process that uses second line mask patterns as an etch mask on the preliminary magnetic tunnel junctions to form magnetic tunnel junctions, wherein the second line mask patterns extend in the second direction and are arranged along the first direction;

forming, before the performing of the second ion-beam etch process, a first capping insulation layer on a top surface of each of the preliminary magnetic tunnel junctions; and
forming a second capping insulation layer on a top surface of each of the magnetic tunnel junctions so that the first capping insulation layer is interposed between the second capping insulation layer and the top surface of each of the magnetic tunnel junctions,
wherein the first ion-beam etch process uses first and second ion beams that are obliquely incident toward the substrate, the first and second ion beams being substa

Assignees

• Park Jongchul
• Samsung Electronics Co Ltd

Inventors

• Park Jongchul

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic