Method to etch non-volatile metal materials
US-2015340603-A1 · Nov 26, 2015 · US
Fabrication method for high-density MRAM using thin hard mask
US9070869B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070869-B2 |
| Application number | US-201314051327-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 10, 2013 |
| Priority date | Oct 10, 2013 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top electrode for the MTJ cells. Using a thin metallic hard mask is possible when the hard mask material acts as a CMP stopper without substantial loss of thickness. In the first embodiment, the single layer hard mask is preferably ruthenium. In the second embodiment, the lower layer of the bi-layer hard mask is preferably ruthenium. The wafer is preferably rotated during the IBE process for uniform etching. A capping layer under the hard mask is preferably used as the etch stopper during hard mask etch process in order not to damage or etch through the upper magnetic layer.
First claim
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The invention claimed is: 1. A method for fabricating an array of magnetic memory cells on a wafer comprising: depositing a plurality of layers for magnetic memory cells over a wafer, including layers for a bottom electrode, a lower magnetic layer, a junction layer and an upper magnetic layer; depositing a capping layer over the plurality of layers for magnetic memory cells; depositing a hard mask with at least a first layer of metallic material; patterning the hard mask lay…
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- What does patent US9070869B2 cover?
- Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top electrode for the MTJ cells. Using a thin metallic hard mask is possible when the hard ma…
- Who is the assignee on this patent?
- Avalanche Technology Inc, Avalanche Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L43/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).