Resistive RAM structure and method of fabrication thereof

Patent metadata

Field	Value
Publication number	US-9978938-B2
Application number	US-201514941037-A
Country	US
Kind code	B2
Filing date	Nov 13, 2015
Priority date	Nov 13, 2015
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A metal-insulator-metal (MIM) capacitor structure of an RRAM device includes a first electrode and a second electrode with an insulating layer interposing the first and second electrodes. The conductive filament providing for a switching function of the RRAM device may be formed within the insulating layer. Further, a nitrogen-rich metal layer interposes the second electrode and the insulating layer. The nitrogen-rich metal layer includes a greater nitrogen concentration than that of the adjacent second electrode.

First claim

What is claimed is:

1. A metal-insulator-metal (MIM) capacitor structure, comprising:
a first electrode and a second electrode, wherein the second electrode is a metal-rich metal nitride layer;
an insulating layer interposing the first and second electrodes, wherein the insulating layer is operable to form a conductive filament of oxygen vacancies in the insulating layer during operation of a resistive random access memory (RRAM) device including the MIM capacitor structure; and
a nitrogen-rich metal layer interposing the second electrode and the insulating layer.

2. The MIM capacitor structure of claim 1 , wherein the nitrogen-rich metal layer includes greater than 5% excess nitrogen.

3. The MIM capacitor structure of claim 1 , wherein the nitrogen-rich metal layer is nitrogen-rich TiN and the second electrode is Ti-rich TiN.

4. The MIM capacitor structure of claim 1 , wherein the insulating layer is a high-k dielectric.

5. The MIM capacitor structure of claim 1 , further comprising:
a capping layer interposing the insulating layer and the first electrode.

6. The MIM capacitor structure of claim 1 , wherein the nitrogen-rich metal layer is selected from the group consisting of TiN, TaN, HfN, ZrN, WN, NbN, MoN, and combinations thereof.

7. The MIM capacitor structure of claim 1 , wherein the first electrode is a metal-rich metal nitride having a first type of metal and the nitrogen-rich metal layer is a metal nitride having the first type of metal.

8. The MIM capacitor structure of claim 1 , wherein the second electrode is the metal-rich metal nitride layer having a first nitrogen-concentration, wherein the first nitrogen concentration is substantially constant from a top surface to a bottom surface of the second electrode, and wherein the nitrogen-rich metal layer has a second nitrogen-concentration greater than the first nitrogen-concentration.

9. A MIM capacitor of a resistive random access memory (RRAM) device, comprising:
a top electrode disposed over a semiconductor substrate;
a bottom electrode disposed between the top electrode and the semiconductor substrate, wherein the bottom electrode includes a first composition of a nitride of a first metal, wherein the first composition is a metal-rich metal nitride;
a dielectric layer interposing the top and bottom electrodes, wherein the dielectric layer is operable to form a conductive filament during operation of the RRAM device; and
a metal nitride layer formed between the bottom electrode and the dielectric layer, wherein the metal nitride layer includes a second composition of a nitride of the first metal wherein the second composition is a nitride-rich metal nitride and has a greater atomic percentage of nitrogen than the bottom electrode.

10. The MIM capacitor of claim 9 , wherein the metal nitride layer directly interfaces the bottom electrode.

11. The MIM capacitor of claim 9 , wherein the metal nitride layer directly interfaces the dielectric layer.

12. The MIM capacitor of claim 9 , wherein the first metal is one of Ta, Ti, Hf, Zr, W, Nb, Mo, and combinations thereof.

13. The MIM capacitor of claim 9 , wherein the greater atomic percentage of nitrogen of the metal nitride layer includes at least 5% greater atomic percentage than the bottom electrode.

14. The MIM capacitor of claim 9 , wherein the atomic percentage of nitrogen in the metal nitride layer is between approximately 1.0 and approximately 1.1 and an atomic percentage of nitrogen in the bottom electrode is between approximately 0.90 and approximately 0.98.

15. The MIM capacitor of claim 9 , wherein the bottom electrode is titanium-rich TiN and the metal nitride layer is nitrogen-rich TiN.

16. A method, comprising:
providing a semiconductor substrate; and
forming a metal-insulator-metal capacitor over the semiconductor substrate, wherein the forming the MIM capacitor includes:
depositing a barrier layer directly on an interconnect layer disposed over the semiconductor substrate, wherein the barrier layer has a first metal composition;
depositing a bottom electrode over a semiconductor substrate wherein the bottom electrode has a second metal composition different than the first metal composition and has a first nitrogen concentration, wherein a bottom surface of the bottom electrode having the first second metal composition and the first nitrogen concentration is formed interfacing the barrier layer;
after or concurrently with depositing the bottom electrode, forming a region on the bottom electrode having a second nitrogen concentration, greater than the first nitrogen concentration;
depositing a dielectric layer on the region; and
forming a top electrode over the dielectric layer.

17. The method of claim 16 , wherein the forming the region on the bottom electrode having the second nitrogen concentration includes performing a plasma treatment on the bottom electrode to increase a nitrogen content of a surface region of the bottom electrode.

18. The method of claim 16 , wherein the forming the region on the bottom electrode having the second nitrogen concentration includes:
forming the bottom electrode by a deposition process using a first nitrogen flow rate; and
thereafter, continuing the deposition process using a second nitrogen flow rate, wherein the second nitrogen flow rate is greater than the first nitrogen flow rate.

19. The method of claim 16 , further comprising:
providing a voltage to the MIM capacitor to form a conductive filament in the dielectric layer.

20. The method of claim 16 , further comprising:
forming the interconnect layer of copper disposed in an interlayer dielectric layer (ILD).

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Trinh Hai-Dang
• Tsai Cheng-Yuan
• Lin Hsing-Lien

Classifications

• H01L45/1233

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic

• H01L27/2436

  Electricity · mapped topic

• H01L45/16

  Electricity · mapped topic

• H01L45/1608

  Electricity · mapped topic