Semiconductor device with non-uniform trench oxide layer

Patent metadata

Field	Value
Publication number	US-9978859-B2
Application number	US-201715614257-A
Country	US
Kind code	B2
Filing date	Jun 5, 2017
Priority date	Jul 8, 2015
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward the bottom of the trench. The epitaxial layer can have a non-uniform dopant concentration, where the dopant concentration varies according to the thickness of the oxide layer.

First claim

What is claimed is:

1. A method of forming a semiconductor device, the method comprising:
forming a first trench in an epitaxial layer, the first trench having a bottom and sidewalls;
depositing an oxide layer across the bottom and on the sidewalls of the first trench;
depositing material within the first trench to cover a first portion of the oxide layer and leaving a second portion of the oxide layer exposed;
removing some of the oxide layer in the second portion, wherein after said removing the second portion of the oxide layer has a thickness that is less than a thickness of the first portion of the oxide layer;
depositing the material in the first trench to cover the second portion of the oxide layer;
forming a source electrode in contact with the material in the first trench; and
adding dopant outside the first trench to the epitaxial layer to produce a non-uniform concentration of the dopant in the epitaxial layer outside the first trench, wherein the non-uniform concentration of the dopant in the epitaxial layer varies according to the thickness of the oxide layer inside the first trench and adjacent thereto.

2. The method of claim 1 , further comprising:
adding dopant to a first region of the epitaxial layer outside the first trench at a depth corresponding to the first portion of the oxide layer to produce a first dopant concentration in the first region; and
adding the dopant to a second region of the epitaxial layer outside the first trench at a depth corresponding to the second portion of the oxide layer to produce a second dopant concentration in the second region.

3. The method of claim 2 , wherein the first dopant concentration is less than the second dopant concentration.

4. The method of claim 1 , wherein the thickness of the oxide layer decreases linearly through the first portion of the oxide layer and decreases linearly through the second portion of the oxide layer.

5. The method of claim 1 , wherein the first portion of the oxide layer has a uniform first thickness, and wherein the second portion of the oxide layer has a uniform second thickness, the second thickness less than the first thickness.

6. The method of claim 1 , further comprising forming a structure adjacent to the first trench, the structure comprising: a second trench filled with material, a body region, and a source region.

Assignees

• Vishay Siliconix

Inventors

• Park Chanho
• Shibib Ayman
• Terrill Kyle

Classifications

• H10D64/2527

  for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies · CPC title

• H01L29/36

  Electricity · mapped topic

• H01L29/407

  Electricity · mapped topic

• H01L29/404

  Electricity · mapped topic

• H01L29/7813

  Electricity · mapped topic