High voltage resistor with high voltage junction termination
US-2024014260-A1 · Jan 11, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/36 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 2,516 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 244 |
| 2016 | 324 |
| 2017 | 333 |
| 2018 | 328 |
| 2019 | 354 |
| 2020 | 329 |
| 2021 | 198 |
| 2022 | 143 |
| 2023 | 117 |
| 2024 | 121 |
| 2025 | 25 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Group III-V Device with a Selectively Modified Impurity Concentration
US-2015380497-A1 · Dec 31, 2015 · US
Silicon carbide semiconductor device and method for manufacturing same
US-9224802-B2 · Dec 29, 2015 · US
Multi-channel gate-all-around fet
US-2015372104-A1 · Dec 24, 2015 · US
P-fet with graded silicon-germanium channel
US-2015364555-A1 · Dec 17, 2015 · US
Nanocrystal thin film fabrication methods and apparatus
US-2015364324-A1 · Dec 17, 2015 · US
Semiconductor heterojunction device
US-2015357456-A1 · Dec 10, 2015 · US
Transistor structure including epitaxial channel layers and raised source/drain regions
US-2015349065-A1 · Dec 3, 2015 · US
Semiconductor device
US-2015349060-A1 · Dec 3, 2015 · US
Method for controlling concentration of donor in GA2O3-based single crystal
US-9202876-B2 · Dec 1, 2015 · US
Semiconductor Device
US-2015333075-A1 · Nov 19, 2015 · US
Selective germanium p-contact metalization through trench
US-2015333180-A1 · Nov 19, 2015 · US
Semiconductor device
US-2015325708-A1 · Nov 12, 2015 · US
Low cost transistors
US-9184163-B1 · Nov 10, 2015 · US
Semiconductor device and related fabrication methods
US-9184257-B2 · Nov 10, 2015 · US
Semiconductor device
US-9184268-B2 · Nov 10, 2015 · US
Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
US-2015318167-A1 · Nov 5, 2015 · US
Epitaxial wafer and switch element and light-emitting element using same
US-2015311290-A1 · Oct 29, 2015 · US
P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
US-2015287794-A1 · Oct 8, 2015 · US
Silicon carbide semiconductor device and method for manufacturing same
US-2015287817-A1 · Oct 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/36?
- CPC H01L29/36 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/36 (Electricity)?
- Our database includes 2,516 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/36 growing?
- Publication counts under this code: 121 in 2024 vs 25 in 2025 (latest complete years).