Semiconductor Device with Thermally Grown Oxide Layer Between Field and Gate Electrode and Method of Manufacturing
US-2015380403-A1 · Dec 31, 2015 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/407 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 2,499 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 176 |
| 2016 | 294 |
| 2017 | 341 |
| 2018 | 257 |
| 2019 | 298 |
| 2020 | 282 |
| 2021 | 207 |
| 2022 | 215 |
| 2023 | 198 |
| 2024 | 190 |
| 2025 | 41 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Compliant bipolar micro device transfer head with silicon electrodes
US-9224629-B2 · Dec 29, 2015 · US
High voltage field balance metal oxide field effect transistor (fbm)
US-2015372129-A1 · Dec 24, 2015 · US
Semiconductor device and fabricating method thereof
US-9219148-B2 · Dec 22, 2015 · US
Fabrication of shielded gate trench MOSFET with increased source-metal contact
US-9209260-B2 · Dec 8, 2015 · US
Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
US-9202882-B2 · Dec 1, 2015 · US
Transistors with isolation regions
US-2015333147-A1 · Nov 19, 2015 · US
Vertical power MOSFET having planar channel and its method of fabrication
US-9184248-B2 · Nov 10, 2015 · US
Power MOSFET and methods for forming the same
US-9178041-B2 · Nov 3, 2015 · US
Split poly connection via through-poly-contact (tpc) in split-gate based power mosfets
US-2015311295-A1 · Oct 29, 2015 · US
Integrated Transistor Structure Having a Power Transistor and a Bipolar Transistor
US-2015311195-A1 · Oct 29, 2015 · US
Field plate trench transistor and method for producing it
US-9171841-B2 · Oct 27, 2015 · US
Edge termination configurations for high voltage semiconductor power devices
US-9171917-B2 · Oct 27, 2015 · US
Trench power MOSFET
US-9171931-B2 · Oct 27, 2015 · US
Circuit configured to adjust the activation state of transistors based on load conditions
US-9166028-B2 · Oct 20, 2015 · US
Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
US-9159819-B2 · Oct 13, 2015 · US
Dual gate lateral MOSFET
US-9159786-B2 · Oct 13, 2015 · US
Transistor and method of manufacturing the same
US-9159827-B2 · Oct 13, 2015 · US
Semiconductor device
US-9153575-B2 · Oct 6, 2015 · US
Termination design for high voltage device
US-2015279984-A1 · Oct 1, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/407?
- CPC H01L29/407 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/407 (Electricity)?
- Our database includes 2,499 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/407 growing?
- Publication counts under this code: 190 in 2024 vs 41 in 2025 (latest complete years).