System and method for selective zapping

Patent metadata

Field	Value
Publication number	US-9978627-B2
Application number	US-201614995088-A
Country	US
Kind code	B2
Filing date	Jan 13, 2016
Priority date	Jan 13, 2016
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

First claim

We claim:

1. A system for zapping a wafer, the system comprising:
a pulse generator;
a sensor;
a first conductive interface;
a second conductive interface; and
a controller;
wherein the pulse generator is configured to generate zapping pulses;
wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of the wafer;
wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and
wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

2. The system according to claim 1 , wherein the sensor is configured to detect an occurrence of breakdowns of the backside insulating layer in the first location and in the second location; and wherein the controller is configured to stop generating the zapping pulses in response to a detection of the occurrence of the breakdowns.

3. The system according to claim 2 , wherein the sensor is configured to detect occurrence of the breakdowns of the backside insulating layer in the first location and in the second location when an electrical signal that passes through the second conductive interface exceeds an intensity threshold.

4. The system according to claim 1 , wherein the controller is configured to control at least one out of an intensity of the zapping pulses, duration of the zapping pulses and an interval between adjacent zapping pulses.

5. The system according to claim 1 , wherein the pulse generator comprises an output stage that is configured to (a) output the zapping pulses when operating at a zapping mode, and (b) receive discharge current that passes through the first conductive interface when operating in a discharge mode.

6. The system according to claim 1 , wherein the first conductive interface is coupled to the pulse generator via a resistor that is configured to limit a current of the zapping pulses below a predefined current threshold.

7. The system according to claim 1 , wherein the first conductive interface is coupled to the pulse generator via a resistive path.

8. The system according to claim 1 , further comprising an electrostatic chuck for supporting the wafer; and wherein the first conductive interface and the second conductive interface are configured to propagate through holes in the electrostatic chuck.

9. A method for zapping a wafer, the method comprising:
generating, by a pulse generator, zapping pulses;
supplying, by a first conductive interface, the zapping pulses to a first location of a backside insulating layer of the wafer;
contacting a second location of the backside insulating layer by a second conductive interface;
monitoring, by a sensor, a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; and
controlling, by a controller, generating of the zapping pulses in response to the monitoring result.

10. A system for zapping a wafer, the system comprising:
a pulse generator;
a sensor;
a first conductive interface;
a second conductive interface; and
a controller;
wherein the pulse generator is configured to generate zapping pulses;
wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of the wafer;
wherein the sensor is configured to detect an occurrence of a breakdown of the backside insulating layer by monitoring an electrical signal that passes through the second conductive interface and through a second location of the backside insulating layer as a result of the zapping pulses; and
wherein the controller is configured to stop generating the zapping pulses in response to a detection of the occurrence of the breakdown.

11. The system according to claim 10 , wherein the first conductive interface is coupled to the pulse generator via a resistor that is configured to limit a current of the zapping pulses below a predefined current threshold.

12. The system according to claim 10 , wherein the first conductive interface is coupled to the pulse generator via a resistive path.

13. The system according to claim 10 , wherein the pulse generator comprises an output stage that is configured to (a) output the zapping pulses when operating at a zapping mode, and (b) receive discharge current that passes through the first conductive interface when operating in a discharge mode.

14. The system according to claim 10 , further comprising a diode for alternating current (DIAC) that is configured to prevent peaks of the electrical signal that are below a breakout voltage of the DIAC to reach the sensor.

15. The system according to claim 10 , further comprising an electrostatic chuck for supporting the wafer; and wherein the first conductive interface and the second conductive interface are configured to propagate through holes in the electrostatic chuck.

Assignees

• Applied Materials Israel Ltd
• Applied Materials Israel Ltd

Inventors

• Biber Tuvia
• Kerner Efim
• Siman Tov Efraim

Classifications

• H10P95/80

  Electrical treatments, e.g. for electroforming · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/207 Primary

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P72/0616

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P72/72

  using electrostatic chucks · CPC title