Fixed cutter drill bit cutter elements including hard cutting tables made from CVD synthetic diamonds

Patent metadata

Field	Value
Publication number	US-9976231-B2
Application number	US-201314443502-A
Country	US
Kind code	B2
Filing date	Nov 18, 2013
Priority date	Nov 21, 2012
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

Systems and methods of forming components from CVD single crystal diamonds that can withstand high temperatures and pressures, for example, in a mining and/or drilling environment. This may be accomplished by transforming a graphite powder by hot-filament chemical vapor deposition (HFCVD) into a CVD single diamond crystal powder, growing a plurality of CVD single diamond crystals on a planar surface of a substrate or on a dowel. In one example, if a substrate is used as the growth surface, the plurality of CVD single crystals grow in at least one layer on the substrate and at least a portion of the plurality of CVD single diamond crystals are removed from the substrate in the form of a plurality of discrete intact sheets of CVD single diamond crystals, stacked in a mold, and sintered, for example, to form a CVD single crystal diamond table.

First claim

What is claimed is:

1. A method for forming a cutter element for a drill bit, the method comprising:
(a) transforming a graphite powder into a CVD diamond powder;
(b) growing a plurality of CVD single crystal diamonds on a substrate, wherein the plurality of CVD single crystal diamonds are grown in an orientation along the [100] crystallographic plane;
(c) removing at least a portion of the CVD single crystal diamonds from the substrate after (b);
(d) transforming the removed CVD single crystal diamonds into a CVD single crystal diamond powder, wherein the CVD single crystal diamond powder comprises a plurality of CVD single crystal diamonds, wherein each CVD single crystal diamond of the plurality of CVD single crystal diamonds is a rectangular cube, wherein each side of each rectangular cube has a width between 10 and 20 microns;
(e) disposing the CVD single crystal diamond powder and a tungsten carbide support element into a mold; and
(f) thermo-mechanically processing the CVD single crystal diamonds powder in the mold to form a solid CVD diamond crystal table secured to the tungsten carbide support element, wherein the solid CVD diamond crystal table comprises a plurality of single crystal diamonds.

2. The method of claim 1 , wherein the substrate comprises a catalyst, and wherein (b) comprises initiating the growth of the plurality of CVD single crystal diamonds with the catalyst.

3. The method of claim 2 , wherein the substrate is a dowel.

4. The method of claim 3 , wherein the substrate comprises cobalt (Co), nickel (Ni), iron (Fe), tungsten (W), and molybdenum (Mo), or an alloy thereof.

5. The method of claim 1 , further comprising leaching the solid CVD diamond crystal table after (f).

6. The method of claim 1 , wherein (a) comprises transforming the graphite powder into a CVD diamond powder by hot-filament chemical vapor deposition (HFCVD).

Assignees

• Nat Oilwell Dht Lp

Inventors

• Zhan Ii Guodong
• Nixon Michael Scott

Classifications

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• B24D99/005

  Segments of abrasive wheels · CPC title

• C30B25/00 Primary

  Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title

• C30B23/00

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title