Etching time detection means and method for etching device

Patent metadata

Field	Value
Publication number	US-9972546-B2
Application number	US-201313984342-A
Country	US
Kind code	B2
Filing date	Mar 12, 2013
Priority date	Mar 31, 2012
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.

First claim

What is claimed is:

1. An etching time detection means for an etching device including an upper substrate and a lower substrate arranged opposed to each other, the means comprising:
a light wave emitter for emitting a light wave to an etchant;
a light wave receiver fixed on the upper substrate and opposed to the light wave emitter for receiving the light wave emitted from the light wave emitter and transmitted through the etchant; and
a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals from the light wave emitter and the light wave receiver and calculating an etching time,
wherein the detecting system comprises a transmittance calculation module, the transmittance calculation module is communicated with the light wave emitter and the light wave receiver for receiving the light intensity signals from the light wave emitter and the light wave receiver and calculating a transmittance based on a ratio of the light intensity signal received by the light wave receiver to the light intensity signal emitted from the light wave emitter,
wherein the detecting system further comprises a timing start detection module, a timing end detection module and an etching time calculation module, wherein
the timing start detection module is configured for receiving the transmittance output from the transmittance calculation module and determining a timing start time of etching in response to that the transmittance is decreased to be less than a first transmittance threshold;
the timing end detection module is configured for receiving the transmittance output from the transmittance calculation module and determining a timing end time of etching in response to that the transmittance is increased to be higher than a second transmittance threshold, after the timing start time of etching is determined, wherein, the first transmittance threshold is lower than the second transmittance threshold.

2. The means according to claim 1 , wherein the light wave receiver is arranged in such way that the light wave emitted from the light wave emitter is transmitted through the etchant and reaches the light wave receiver.

3. The means according to claim 1 , wherein the etching time calculation module is respectively communicated with the timing start detection module and the timing end detection module for calculating an etching time based on the timing start time of etching and the timing end time of etching.

4. The means according to claim 1 , wherein a size of the light wave emitter is greater than a size of the light wave receiver in a plan view where the light wave emitter and the light wave receiver are overlapped with each other, the light wave receiver is located within an irradiation region of the light wave emitted from the light wave emitter.

5. The means according to claim 1 , wherein a plurality of nozzles are arranged on the upper substrate, the light wave receiver is arranged in a gap between the nozzles.

6. The means according to claim 5 , wherein the light wave emitter is arranged on a backside of the lower substrate.

7. The means according to claim 1 , wherein the light wave emitter is of a strip shape extending in a first direction, and the light wave receiver is of a strip shape extending in a second direction, the first direction is perpendicular to the second direction.

8. An etching device comprising the etching time detection means according to claim 1 .

9. An etching time detection method used with an etching time detection means for an etching device including an upper substrate and a lower substrate arranged opposed to each other, the method comprises:
emitting a light wave to an etchant in the etching device by a light wave emitter;
receiving a light wave emitted from the light wave emitter and transmitted through the etchant by a light wave receiver fixed on the upper substrate and opposed to the light wave emitter; and
receiving light intensity signals from the light wave emitter and the light wave receiver and calculating a transmittance based on a ratio of the light intensity signals received by the light wave receiver to the light intensity signals emitted from the light wave emitter, by a transmittance calculation module communicated with the light wave emitter and the light wave receiver;
receiving the transmittance output from the transmittance calculation module and determining a timing start time of etching in response to that the transmittance is decreased to be less than a first transmittance threshold, by a timing start detection module;
receiving the transmittance output from the transmittance calculation module and determining a timing end time of etching in response to that the transmittance Is increased to be higher than a second transmittance threshold after the timing start time of etching is determined, by a timing end detection module, wherein, the first transmittance threshold is lower than the second transmittance threshold;
calculating an etching time based on the timing start time of etching and the timing end time of etching, by an etching time calculation module.

Assignees

• Beijing Boe Optoelectronics Tech Co Ltd

Inventors

• Li Tiansheng
• Yan Changjiang
• Xu Shaoying
• Xie Zhenyu
• Jiang Xiaohui

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P74/20 Primary

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H01L21/67253

  Electricity · mapped topic