Spin-torque oscillator based on easy-cone anisotropy

Patent metadata

Field	Value
Publication number	US-9966901-B2
Application number	US-201615067009-A
Country	US
Kind code	B2
Filing date	Mar 10, 2016
Priority date	Nov 19, 2015
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

First claim

What is claimed is:

1. A spin-torque oscillator comprising:
a driving reference layer having a fixed magnetization;
a nonmagnetic spacer layer;
a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees;
a readout layer having a fixed magnetization; and
a second nonmagnetic spacer layer between the readout layer and the free layer,
wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis, and
wherein a component of the fixed magnetization of the readout layer extends along a direction perpendicular to the axis, the free layer being between the readout layer and the driving reference layer.

2. The spin-torque oscillator of claim 1 , wherein the spin-torque oscillator is configured such that a frequency of precession of the changeable magnetization is directly proportional to a magnitude of a current flowing through the spin-torque oscillator.

3. The spin-torque oscillator of claim 2 , wherein the frequency of precession is in a range of 1 MHz to 50 GHz.

4. The spin-torque oscillator of claim 2 , wherein an angle of precession of the changeable magnetization is proportional to the magnitude of the current.

5. The spin-torque oscillator of claim 1 , further comprising:
a bottom contact; and
a top contact,
wherein the driving reference layer, the nonmagnetic spacer layer, the free layer, the second nonmagnetic spacer layer, and the readout layer are between the bottom contact and the top contact.

6. The spin-torque oscillator of claim 5 , further comprising a current source configured to supply current through the spin-torque oscillator,
wherein a resistance between the bottom contact and the top contact varies in accordance with the current supplied to the spin-torque oscillator.

7. The spin-torque oscillator of claim 6 , wherein the resistance between the bottom contact and the top contact varies substantially linearly with respect to the current.

8. The spin-torque oscillator of claim 5 , further comprising a compensation reference layer between the top contact and the readout layer, the compensation reference layer having a fixed magnetization in a direction opposite to the fixed magnetization of the readout layer.

9. The spin-torque oscillator of claim 8 , further comprising an antiferromagnetic layer on the compensation reference layer.

10. The spin-torque oscillator of claim 1 , wherein an externally applied magnetic field is not required for the changeable magnetization to precess around the axis.

11. The spin-torque oscillator of claim 1 , wherein the nonmagnetic spacer layer comprises at least one material selected from the group consisting of MgO, AlO, and TiO.

12. The spin-torque oscillator of claim 1 , wherein the free layer comprises at least one material selected from the group consisting of Fe, Ni, and Co.

13. The spin-torque oscillator of claim 1 , wherein the free layer further comprises at least one material selected from the group consisting of W, Mg, B, Ta, Cs, Zr, Pt, Pd, Tb, and/or Ru.

14. The spin-torque oscillator of claim 1 , wherein the free layer comprises CoFeNiX, where X is at least one material selected from the group consisting of Re, Ir, Bi, and W.

15. The spin-torque oscillator of claim 1 , wherein the free layer comprises CoFeNiX, where X is at least one material selected from the group consisting of I, Te, Os, Pt, and Pb.

16. The spin-torque oscillator of claim 1 , wherein an energy density of the easy-cone magnetic anisotropy is:
E (θ)= K 1 sin 2 (θ)+β K 1 sin 2 (2θ)

where |β| is greater than or equal to 0.25.

17. An electronic device comprising:
a spin-torque oscillator comprising:
a driving reference layer having a fixed magnetization;
a nonmagnetic spacer layer;
a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees;
a readout layer having a fixed magnetization; and
a second nonmagnetic spacer layer between the readout layer and the free layer,
wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis, and
wherein a component of the fixed magnetization of the readout layer extends along a direction perpendicular to the axis, the free layer being between the readout layer and the driving reference layer;

a current source configured to supply a current to the spin-torque oscillator; and
a read-out circuit configured to measure a resistance of the spin-torque oscillator.

18. The electronic device of claim 17 , wherein a frequency of precession of the changeable magnetization is directly proportional to a magnitude of the current.

19. A method of manufacturing a spin-torque oscillator, comprising:
providing a driving reference layer;
providing a nonmagnetic spacer layer on the driving reference layer;
providing a free layer having easy cone anisotropy on the nonmagnetic spacer layer;
providing a second nonmagnetic spacer layer on the free layer; and
providing a readout layer having a fixed magnetization on the second nonmagnetic spacer layer,
wherein a component of the fixed magnetization of the readout layer extends along a direction perpendicular to an axis, the free layer being between the readout layer and the driving reference layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Apalkov Dmytro
• Chepulskyy Roman
• Nikitin Vladimir

Classifications

• H03B15/006 Primary

  using spin transfer effects or giant magnetoresistance · CPC title

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L29/82

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic