MgO insertion into free layer for magnetic memory applications

Patent metadata

Field	Value
Publication number	US-9966529-B1
Application number	US-201715461779-A
Country	US
Kind code	B1
Filing date	Mar 17, 2017
Priority date	Mar 17, 2017
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, metal clusters are formed in the FL and are subsequently partially or fully oxidized by scavenging oxygen to generate additional FL/oxide interfaces that enhance PMA, provide an acceptable resistance x area (RA) value, and preserve the magnetoresistive ratio. In other embodiments, a continuous or discontinuous metal (M) or MQ alloy layer within the FL reacts with scavenged oxygen to form a partially oxidized metal or alloy layer that enhances PMA and maintains acceptable RA. M is one of Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, or Hf, and Q is a transition metal, B, C, or Al.

First claim

We claim:

1. A magnetic element, comprising:
(a) a tunnel barrier layer that is a first metal oxide layer;
(b) a Hk enhancing layer or a non-magnetic metal or alloy layer (NML); and
(c) a free layer (FL) with a first surface that forms a first interface with the tunnel barrier layer, a second surface that forms a second interface with the Hk enhancing layer or with the NML, and comprised of a plurality of metal oxide clusters between the first and second surfaces wherein each of the metal oxide clusters form an interface with the free layer thereby enhancing perpendicular magnetic anisotropy (PMA) in the free layer.

2. The magnetic element of claim 1 wherein the tunnel barrier layer, the Hk enhancing layer, and metal oxide clusters are comprised of MgO.

3. The magnetic element of claim 1 wherein the plurality of metal oxide clusters has a stoichiometric oxidation state.

4. The magnetic element of claim 1 wherein the plurality of metal oxide clusters has a non-stoichiometric oxidation state.

5. The magnetic element of claim 1 where the free layer has a thickness from about 5 to 15 Angstroms.

6. The magnetic element of claim 1 wherein the free layer is a single layer or a multilayer of one or more of Co, Fe, CoFe, CoFeB, CoB, FeB, CoFeNi, and CoFeNiB.

7. The magnetic element of claim 1 wherein the free layer is comprised of a high Ku material having inherent PMA which is a Heusler alloy that is Ni 2 MnZ, Pd 2 MnZ, Co 2 MnZ, Fe 2 MnZ, Co 2 FeZ, Mn 3 Ge, or Mn 2 Ga where Z is one of Si, Ge, Al, Ga, In, Sn, and Sb, or an ordered L1 0 or L1 1 material with a composition that is one of MnAl, MnGa, or RT wherein R is Rh, Pd, Pt, Ir, or an alloy thereof, and T is Fe, Co, Ni, or an alloy thereof, or a rare-earth alloy with a TbFeCo, GdCoFe, FeNdB, or SmCo composition.

8. The magnetic element of claim 1 further comprising a seed layer formed on a substrate, a reference layer (RL) on the seed layer, and an uppermost capping layer to yield a seed layer/RL/tunnel barrier layer/FL/Hk enhancing layer/capping layer configuration or a seed layer/RL/tunnel barrier layer/FL/NML/capping layer configuration.

9. The magnetic element of claim 1 further comprising a seed layer formed on a substrate, a reference layer (RL) on the tunnel barrier layer, and a capping layer on the RL to yield a seed layer/Hk enhancing layer/FL/tunnel barrier layer/RL/capping layer configuration, or a seed layer/NML/FL/tunnel barrier layer/RL/capping layer configuration.

10. The magnetic element of claim 1 wherein the Hk enhancing layer is a single layer or a laminate comprised of one or more oxides selected from MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlOx, MnOx, VOx, AlOx, TiOx, and HfOx, and has a resistance x area (RA) value less than a RA value of the tunnel barrier layer.

11. The magnetic element of claim 1 wherein the Hk enhancing layer is TiN, or is comprised of a first layer made of one of MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlox, MnOx, VOx, AlOx, TiOx, and HfOx, and a second layer that is TiN.

12. The magnetic element of claim 1 wherein the metal oxide clusters are comprised of an element (M) that is Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, Hf, or comprise M and an element Q where Q is unequal to M, and Q is B, C, Al, or a transition metal.

13. The magnetic element of claim 1 wherein the free layer, tunnel barrier layer, Hk enhancing layer, and NML are part of a MRAM, STT-MRAM, or another spintronic device that is a spin torque oscillator, spin hall effect device, magnetic sensor, or a biosensor.

Assignees

• Headway Tech Inc

Inventors

• IWATA Jodi Mari
• Jan Guenole
• Tong Ru-Ying
• Wang Po-Kang

Classifications

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title