Growth of metal on a dielectric

Patent metadata

Field	Value
Publication number	US-9963780-B2
Application number	US-201514958052-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Dec 3, 2015
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

First claim

The invention claimed is:

1. A method for forming metal on a dielectric, comprising:
forming a seed layer on a surface including a reactant element;
forming a first metal layer on the seed layer wherein the first metal layer wets the seed layer;
forming a second metal layer on the first metal layer wherein the second metal layer wets the first metal layer; and
annealing to diffuse the reactant element of the seed layer into the first metal layer to convert the first metal layer to a dielectric layer.

2. The method as recited in claim 1 , wherein the seed layer includes a metal oxide and the reactant element includes oxygen.

3. The method as recited in claim 1 , wherein the seed layer includes a metal nitride and the reactant element includes nitrogen.

4. The method as recited in claim 1 , wherein the first metal layer includes Mg and the dielectric layer includes MgO.

5. The method as recited in claim 1 , further comprising forming a cap on the second metal layer.

6. The method as recited in claim 1 , wherein the reactant element has a greater affinity for the first metal layer than the seed layer.

7. The method as recited in claim 1 , wherein the second metal layer includes FeCo or an alloy thereof.

8. A method for forming metal on a dielectric, comprising:
forming a seed layer on a surface;
forming a first metal layer on the seed layer wherein the first metal layer wets the seed layer;
forming a second metal layer on the first metal layer wherein the second metal layer wets the first metal layer;
reacting the second metal layer with a reactant element; and
annealing to diffuse the reactant element of the second metal layer into the first metal layer to convert the first metal layer to a dielectric layer.

9. The method as recited in claim 8 , wherein the reactant element includes one of oxygen or nitrogen.

10. The method as recited in claim 8 , wherein the first metal layer includes Mg and the dielectric layer includes MgO.

11. The method as recited in claim 8 , further comprising forming a cap on the second metal layer.

12. The method as recited in claim 8 , further comprising forming a dielectric layer on the second metal layer.

13. The me shod as recited in claim 8 , further comprising forming a third metal layer on the second metal layer and annealing further comprises annealing to diffuse the reactant element of the second metal layer into the first metal layer and the third metal layer to convert the first metal layer and the third metal layer to dielectric layers.

14. The method as recited in claim 13 , wherein the third metal layer includes Mg and the dielectric layers include MgO.

15. The method as recited in claim 8 , wherein the reactant has a greater affinity for the first metal layer than the second metal layer.

16. The method as recited in claim 8 , wherein the second metal layer includes FeCo or an alloy thereof.

17. A structure having a metal on a dielectric, comprising:
a seed layer formed on a surface, wherein the seed layer comprises a material capable of donating a reactant element for diffusion into a metal;
a first dielectric layer including the metal and formed on the seed layer, wherein the first dielectric layer includes a wetted interface with the seed layer, and wherein the metal in the first dielectric layer includes an affinity for the reactant element, included in the first dielectric layer, that is higher than adjacent layer; and
a metal layer formed on the first dielectric layer, wherein the metal layer includes a wetted interface with the first dielectric layer.

18. The structure as recited in claim 17 , wherein the reactant element includes oxygen or nitrogen.

19. The structure as recited in claim 17 , further comprising a second dielectric layer formed on the metal layer.

20. The structure as recited in claim 17 , wherein the affinity for the reactant element for the metal in the first dielectric layer is higher than a metal in one of the metal layer and/or the seed layer.

Assignees

• IBM

Inventors

• Hu Guohan
• Worledge Daniel C

Classifications

• C23C16/06 Primary

  characterised by the deposition of metallic material · CPC title

• C23C18/31

  Coating with metals · CPC title

• C23C18/1692

  Heat-treatment · CPC title

• C23C18/50

  with alloys based on iron, cobalt or nickel · CPC title

• C23C18/1689

  After-treatment · CPC title