Wiring substrate

Patent metadata

Field	Value
Publication number	US-9961760-B2
Application number	US-201715489876-A
Country	US
Kind code	B2
Filing date	Apr 18, 2017
Priority date	Jun 13, 2016
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A wiring substrate includes an insulating layer including a projection and a wiring layer on the projection. The wiring layer includes a first metal layer on an end face of the projection and a second metal layer on the first metal layer. The width of the end face of the projection is different from at least one of the width of the first metal layer and the width of the second metal layer. An inner wall surface and a bottom surface of a depression around the projection are roughened surfaces.

First claim

What is claimed is:

1. A wiring substrate, comprising:
an insulating layer including a projection; and
a wiring layer on the projection,
the wiring layer including
a first metal layer on an end face of the projection; and
a second metal layer on the first metal layer,

wherein a width of the end face of the projection is smaller than a width of the first metal layer and a width of the second metal layer, and
an inner wall surface and a bottom surface of a depression around the projection are roughened surfaces.

2. The wiring substrate as claimed in claim 1 , wherein a roughness of the end face of the projection in contact with the first metal layer is smaller than a roughness of the inner wall surface and the bottom surface of the depression.

3. The wiring substrate as claimed in claim 1 , further comprising:
another insulating layer on the insulating layer, the another insulating layer including a photosensitive resin as a principal component, the another insulating layer covering the wiring layer, and the inner wall surface and the bottom surface of the depression.

4. The wiring substrate as claimed in claim 1 , wherein
the insulating layer is formed of an insulating resin, the insulating resin being formed of an organic compound including elements of silicon (Si), carbon (C), hydrogen (H), and oxygen (O), and
a protrusion whose principal component is a silicon oxide is formed in the inner wall surface and the bottom surface of the depression that are the roughened surfaces.

5. A wiring substrate, comprising:
an insulating layer including a projection; and
a wiring layer on the projection,
the wiring layer including
a first metal layer on an end face of the projection; and
a second metal layer on the first metal layer,

wherein a width of the end face of the projection is different from at least one of a width of the first metal layer and a width of the second metal layer,
an inner wall surface and a bottom surface of a depression around the projection are roughened surfaces,
the width of the first metal layer is smaller than the width of the second metal layer, and
the second metal layer includes a surface in contact with the first metal layer, and a peripheral portion of the surface of the second metal layer is exposed outside the first metal layer.

6. The wiring substrate as claimed in claim 5 , wherein a roughness of the end face of the projection in contact with the first metal layer is smaller than a roughness of the inner wall surface and the bottom surface of the depression.

7. The wiring substrate as claimed in claim 5 , wherein
the width of the first metal layer is smaller than the width of the end face of the projection, and
a peripheral portion of the end face of the projection is exposed outside the first metal layer.

8. The wiring substrate as claimed in claim 5 , further comprising:
another insulating layer on the insulating layer, the another insulating layer including a photosensitive resin as a principal component, the another insulating layer covering the wiring layer, and the inner wall surface and the bottom surface of the depression.

9. The wiring substrate as claimed in claim 5 , wherein
the insulating layer is formed of an insulating resin, the insulating resin being formed of an organic compound including elements of silicon (Si), carbon (C), hydrogen (H), and oxygen (O), and
a protrusion whose principal component is a silicon oxide is formed in the inner wall surface and the bottom surface of the depression that are the roughened surfaces.

Assignees

• Shinko Electric Ind Co

Inventors

• Gozu Yusuke
• Sakaguchi Yuta
• Shimizu Noriyoshi

Classifications

• H10W70/635

  Through-vias · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title