Manufacturing method of power storage device

Patent metadata

Field	Value
Publication number	US-9960225-B2
Application number	US-201113164839-A
Country	US
Kind code	B2
Filing date	Jun 21, 2011
Priority date	Jun 30, 2010
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.

First claim

The invention claimed is:

1. A method for manufacturing a power storage device comprising the steps of:
performing a surface treatment on a current collector; and
forming a crystalline semiconductor layer including a whisker over the current collector,
wherein the crystalline semiconductor layer comprises silicon,
wherein a diameter of the whisker is greater than or equal to 500 nm and less than or equal to 3 μm,
wherein a length along an axis of the whisker is greater than or equal to 500 nm and less than or equal to 1000 μm,
wherein the current collector comprises a metal element which forms silicide by reacting with silicon on a surface region of the current collector, and
wherein the surface treatment is performed on the current collector by using a material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma.

2. A method for manufacturing a power storage device according to claim 1 , wherein the surface treatment is performed on the current collector by using the material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma and then processed with running water.

3. A method for manufacturing a power storage device comprising the steps of:
processing a current collector with a material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma; and
forming a crystalline semiconductor layer including a whisker over the current collector,
wherein the crystalline semiconductor layer comprises silicon,
wherein a diameter of the whisker is greater than or equal to 500 nm and less than or equal to 3 μm,
wherein a length along an axis of the whisker is greater than or equal to 500 nm and less than or equal to 1000 μm, and
wherein the current collector comprises a metal element which forms silicide by reacting with silicon on a surface region of the current collector.

4. A method for manufacturing a power storage device according to claim 3 , wherein the current collector is processed with the material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma and then processed with running water.

5. A method for manufacturing a power storage device comprising the steps of:
processing a current collector with a material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma; and
forming a crystalline semiconductor layer including a whisker over the current collector with a source gas containing silicon by a low-pressure chemical vapor deposition method,
wherein the crystalline semiconductor layer comprises silicon,
wherein a diameter of the whisker is greater than or equal to 500 nm and less than or equal to 3 μm,
wherein a length along an axis of the whisker is greater than or equal to 500 nm and less than or equal to 1000 μm, and
wherein the current collector comprises a metal element which forms silicide by reacting with silicon on a surface region of the current collector.

6. A method for manufacturing a power storage device according to claim 5 ,
wherein the current collector is processed with the material selected from the group consisting of a hydrofluoric acid, NF 3 plasma, SiF 4 plasma, and ClF 3 plasma and then processed with running water.

7. A method for manufacturing a power storage device according to claim 1 , wherein a transverse cross-sectional shape of the whisker is circular.

8. A method for manufacturing a power storage device according to claim 5 , wherein a transverse cross-sectional shape of the whisker is circular.

9. A method for manufacturing a power storage device according to claim 1 , wherein the metal element is at least any one of titanium and nickel.

10. A method for manufacturing a power storage device according to claim 5 , wherein the metal element is at least any one of titanium and nickel.

Assignees

• Kuriki Kazutaka
• Konishi Michiko
• Tadokoro Asami
• Yoshida Yasunori
• Ogino Kiyofumi
• Takeuchi Toshihiko
• Semiconductor Energy Lab

Inventors

• Kuriki Kazutaka
• Konishi Michiko
• Tadokoro Asami
• Yoshida Yasunori
• Ogino Kiyofumi
• Takeuchi Toshihiko

Classifications

• Y02E60/13

  Energy storage using capacitors · CPC title

• H01G11/86

  specially adapted for electrodes (carbonisation or activation of carbon for the manufacture of electrodes H01G11/34) · CPC title

• H01G11/12

  Stacked hybrid or EDL capacitors · CPC title

• H01G11/28

  arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives · CPC title

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title