Pellicle with aerogel support frame

Patent metadata

Field	Value
Publication number	US-9547232-B2
Application number	US-201414560688-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Dec 4, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

First claim

What is claimed:

1. An EUV radiation device, comprising:
a reticle;
a substrate support stage;
a pellicle positioned between said reticle and said substrate support stage, wherein said pellicle comprises an aerogel grid and a membrane formed above said aerogel grid; and
a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through said pellicle toward said reticle.

2. The device of claim 1 , wherein said membrane comprises a low-absorption layer of material having an extinction coefficient of at most about 0.02 in the EUV spectral region of about 6-20 nm.

3. The device of claim 1 , wherein said membrane comprises silicon.

4. The device of claim 1 , wherein said aerogel grid comprises silica aerogel.

5. The device of claim 1 , wherein said aerogel grid comprises generally hexagonal openings.

6. A method, comprising:
positioning a pellicle between a reticle and a semiconducting substrate, wherein said pellicle comprises an aerogel grid and a membrane formed on said aerogel grid;
generating radiation at a wavelength of about 20 nm or less; and
directing said generated radiation through said pellicle toward said reticle such that a portion of said generated radiation reflects off of said reticle back through said pellicle toward said semiconducting substrate.

7. The method of claim 6 , further comprising, after irradiating said semiconducting substrate, removing said semiconducting substrate and positioning another semiconducting substrate under said pellicle and performing the steps recited in claim 6 on said another semiconducting substrate.

8. The method of claim 6 , wherein said membrane comprises a low-absorption layer of material having an extinction coefficient of at most about 0.02 in the EUV spectral region of about 6-20 nm.

9. The method of claim 6 , wherein said membrane comprises silicon.

10. The method of claim 6 , wherein said aerogel grid comprises silica aerogel.

11. The method of claim 6 , wherein said aerogel grid comprises generally hexagonal openings.

12. A pellicle, comprising:
an aerogel grid; and
a membrane formed on said aerogel grid.

13. The pellicle of claim 12 , wherein said membrane comprises a low-absorption layer of material having an extinction coefficient of at most about 0.02 in the EUV spectral region of about 6-20 nm.

14. The pellicle of claim 12 , wherein said membrane comprises silicon.

15. The pellicle of claim 12 , wherein said aerogel grid comprises silica aerogel.

16. The pellicle of claim 12 , wherein said aerogel grid comprises generally hexagonal openings.

17. A method, comprising:
forming a release layer above a substrate;
forming a membrane layer above said release layer;
forming an aerogel layer defining a grid structure above said membrane layer;
removing said release layer to separate said membrane layer and said aerogel layer from said substrate; and
mounting said membrane layer and said aerogel layer to a frame.

18. The method of claim 17 , wherein said forming said aerogel layer comprises:
forming an aerogel precursor layer above said membrane;
processing said aerogel precursor layer to form a aerogel layer; and
patterning said aerogel layer using a lithography process to define said grid structure.

19. The method of claim 17 , wherein said forming said aerogel layer comprises:
forming an aerogel precursor layer above said membrane;
processing said aerogel precursor layer to form said aerogel layer and to define open pores in said aerogel layer to define said grid structure.

20. The method of claim 17 , wherein said aerogel layer comprises silica aerogel.

Assignees

• Globalfoundries Inc

Inventors

• Levinson Harry J
• Wood Ii Obert R

Classifications

• G03F7/70916

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F1/64 Primary

  characterised by the frames, e.g. structure or material, including bonding means therefor · CPC title

• G03F1/62 Primary

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F1/22

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title