Epitaxial wafer and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9957641-B2
Application number	US-201515108402-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Aug 1, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.

First claim

The invention claimed is:

1. An epitaxial wafer comprising:
a silicon carbide film having a first main surface;
a silicon carbide substrate having a second main surface,
the silicon carbide film being formed on the second main surface,
the second main surface having an off angle of not more than ±4° relative to a (0001) plane,
an off direction of the off angle being in a range of not more than ±5° relative to a <11-20> direction or in a range of not more than ±5° relative to a <01-10> direction,
a groove portion being formed in the first main surface, the groove portion extending in the off direction along the first main surface, a width of the groove portion in the off direction being twice or more as large as a width of the groove portion in a direction perpendicular to the off direction, the maximum depth of the entirety of the groove portion from the first main surface being not more than 10 nm, wherein
the groove portion includes a first groove portion and a second groove portion connected to the first groove portion,
the first groove portion is formed in one end portion of the groove portion in the off direction,
the second groove portion extends in the off direction from the first groove portion to the other end portion opposite to the one end portion, and a depth of the second groove portion from the first main surface is smaller than the maximum depth of the entirety of the first groove portion,
the first groove portion has a triangular shape in cross-section, and
the second groove portion comprises a bottom surface that is substantially parallel to the first main surface.

2. The epitaxial wafer according to claim 1 , wherein the groove portion extends in the off direction of the off angle from a threading dislocation in the silicon carbide film.

3. The epitaxial wafer according to claim 1 , wherein the groove portion is formed due to at least a threading screw dislocation.

4. The epitaxial wafer according to claim 1 , wherein the width of the groove portion in the off direction is not less than 15 μm and not more than 50 μm.

5. The epitaxial wafer according to claim 1 , wherein the first groove portion comprises a first side wall and a second side wall that form the triangular shape in cross-section, the first side wall extending from the first main surface to the second side wall, and the second side wall extending from the first side wall toward the first main surface to a depth in the silicon carbide film below the first main surface.

Assignees

• Sumitomo Electric Industries

Inventors

• Nishiguchi Taro
• Genba Jun
• Itoh Hironori
• Hatayama Tomoaki
• Doi Hideyuki

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title