Methods and apparatus for microwave plasma assisted chemical vapor deposition reactors
US-2017271132-A1 · Sep 21, 2017 · US
US9957610B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9957610-B2 |
| Application number | US-201715647305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 12, 2017 |
| Priority date | Jul 27, 2016 |
| Publication date | May 1, 2018 |
| Grant date | May 1, 2018 |
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A high-frequency wave supplying structure includes a center conductor that extends in a specified direction, an outer conductor that is coaxial with the center conductor and grounded, and a cylindrical insulating member that is provided between the center conductor and the outer conductor. The distal end of the center conductor is a support portion that supports a workpiece W. A shield member is provided outward of the outer conductor to be coaxial with the outer conductor and the center conductor. The distal end of the shield member is located closer to the support portion in the specified direction than the distal end of the outer conductor. The insulating member includes a protruding portion that protrudes toward the support portion from an opening of the outer conductor. The protruding portion is opposed to the distal end of the outer conductor in the specified direction.
Opening claim text (preview).
The invention claimed is: 1. A high-frequency wave supplying structure employed in a film forming apparatus that performs, in a single chamber, a process of forming a metal film on a workpiece and a process using a high-frequency wave on a workpiece, the structure comprising: a center conductor that extends in a specified direction and to which a high-frequency wave is supplied; an outer conductor that is located outward of the center conductor, coaxial with the center conductor, and grounded; and a cylindrical insulating member that is provided between the center conductor and the outer conductor, wherein the center conductor includes a distal end that protrudes in the specified direction from an opening of the outer conductor, the distal end of the center conductor is a support portion that supports the workpiece, a tubular shield member is arranged outward of the outer conductor to be coaxial with the outer conductor and the center conductor, the shield member includes a distal end that is located at an end in a vicinity of the support portion in the specified direction, the outer conductor includes a distal end that is located at an end in a vicinity of the support portion in the specified direction, the distal end of the shield member is closer to the support portion in the specified direction than the distal end of the outer conductor, the insulating member includes a protruding portion that protrudes in the specified direction toward the support portion from the opening of the outer conductor, and at least one of the protruding portion and the shield member is opposed to the distal end of the outer conductor in the specified direction. 2. The high-frequency wave supplying structure according to claim 1 , wherein the insulating member includes an outer circumferential surface in the protruding portion, the outer circumferential surface of the protruding portion includes a proximal surface, and a distal surface that is closer to the support portion than the proximal surface in the specified direction, and the distal surface of the insulating member is configured to approach the center conductor toward the support portion in the specified direction. 3. The high-frequency wave supplying structure according to claim 2 , wherein the insulating member includes, in the protruding portion, a proximal section, and a distal section that is closer to the support portion than the proximal section in the specified direction, the proximal section has an outer diameter that is constant irrespective of the position in the specified direction, the distal section has an outer diameter that decreases toward the support portion in the specified direction, the proximal section has an outer circumferential surface that serves as the proximal surface, and the distal section has an outer circumferential surface that serves as the distal surface. 4. The high-frequency wave supplying structure according to claim 2 , wherein a position of the distal end of the shield member in the specified direction is closer to the support portion than a boundary portion between the proximal surface and the distal surface in the protruding portion of the insulating member. 5. The high-frequency wave supplying structure according to claim 1 , wherein the shield member has an inner diameter that is larger an outer diameter of the outer conductor, and the shield member is not grounded. 6. The high-frequency wave supplying structure according to claim 1 , wherein the shield member is made of an insulating material.
Electricity · mapped topic
using microwave discharges · CPC title
Electricity · mapped topic
characterised by material of construction or surface finish of the means for supporting the substrate · CPC title
using microwave discharges · CPC title
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