Two-dimensional electron gas (2DEG)-based chemical sensors

Patent metadata

Field	Value
Publication number	US-9470650-B2
Application number	US-201113880566-A
Country	US
Kind code	B2
Filing date	Oct 20, 2011
Priority date	Oct 21, 2010
Publication date	Oct 18, 2016
Grant date	Oct 18, 2016

Abstract

Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.

First claim

What is claimed is:

1. A sensor system for sensing a constituent of a chemical environment, wherein the constituent is a member of a chemical family, the sensor system comprising:
an array of sensors arranged in a matrix, said array of sensors designed, configured, and selected to sense multiple member chemicals of the chemical family and having differing sensitivities to differing ones of the multiple member chemicals based on sensor temperature; wherein each of said sensors includes a catalyst and one or more additional layers designed and configured to protect said catalyst and to allow the constituent to permeate through to said catalyst; wherein said array of sensors includes two-dimensional electron gas (2DEG) sensors;
a plurality of heaters having a plurality of heating elements located proximate to corresponding respective ones of said sensors;
a temperature control system operatively connected to said plurality of heating elements and designed and configured to maintain, simultaneously, differing ones of said sensors in said matrix at differing temperatures below 200° C. during sensing operations of the sensor system;
a sensor response system operatively coupled to said sensors and designed and configured to measure responses of said sensors; and
a matrix analyzer containing an algorithm designed and configured to analyze responses of said sensors, operating at differing temperatures, measured by said sensor response system and to determine the presence of the constituent and distinguish the constituent from the rest of the multiple member chemicals.

2. A sensor system according to claim 1 , wherein the chemical family is hydrocarbons and said 2DEG sensors have responses sensitive to hydrogen.

3. A sensor system according to claim 2 , wherein the chemical family is hydrocarbons with the chemical formula of C x H y .

4. A sensor system according to claim 1 , wherein each of said 2DEG sensors comprises a high-electron-mobility transistor (HEMT).

5. A sensor system according to claim 4 , wherein each said HEMT has a gate electrode that provides said catalyst, and said catalyst is provided for stripping atomic hydrogen from the constituent.

6. A sensor system according to claim 1 , wherein each of said 2DEG sensors comprises a Schottky diode.

7. A sensor system according to claim 6 , wherein each said Schottky diode has a Schottky electrode that provides said catalyst, and said catalyst is provided for stripping atomic hydrogen from the constituent.

8. A sensor system according to claim 1 , wherein each said catalyst is designed and configured to react with the constituent so as to change an electrical response of the corresponding one of said sensors.

9. A sensor system according to claim 8 , wherein said one or more additional layers includes a material that covers said catalyst, is inert to the chemical environment, and has been selected to permit the constituent to reach said catalyst.

Assignees

• Gu Jason
• Melby Jacob H
• Davis Robert F
• Univ Carnegie Mellon

Inventors

• Gu Jason
• Melby Jacob H
• Davis Robert F

Classifications

• G01N27/4141 Primary

  specially adapted for gases · CPC title

• G01N27/414 Primary

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title

• G01N27/129

  Diode type sensors, e.g. gas sensitive Schottky diodes (capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414) · CPC title