Piezoelectric vibration element, piezoelectric vibrator, piezoelectric oscillator, and electronic device

Patent metadata

Field	Value
Publication number	US-9948275-B2
Application number	US-201514683891-A
Country	US
Kind code	B2
Filing date	Apr 10, 2015
Priority date	Mar 18, 2011
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A piezoelectric vibration element includes a piezoelectric substrate including (i) an excitation portion and (ii) a peripheral portion that is integrally arranged at a periphery of the excitation portion and whose thickness is smaller than that of the excitation portion. The piezoelectric vibration element further includes excitation electrodes that are arranged in a front-and-rear relationship on front and rear principal faces of the piezoelectric substrate. The excitation portion includes a first portion that is at a location of a maximum thickness of the excitation portion and a side face that is connected to (i) a principal face of the first portion and (ii) a principal face of the peripheral portion. The side face includes level difference portions having a level difference and a face that has no level difference from the principal face of the first portion to the principal face of the peripheral portion.

First claim

What is claimed is:

1. A piezoelectric vibration element comprising:
a piezoelectric substrate including (i) an excitation portion and (ii) a peripheral portion that is integrally arranged at a periphery of the excitation portion and whose thickness is smaller than that of the excitation portion; and
excitation electrodes that are arranged in a front-and-rear relationship on front and rear principal faces of the piezoelectric substrate;
the excitation portion including:
a first portion that is at a location of a maximum thickness of the excitation portion; and
a plurality of side faces that each are connected to (i) a principal face of the first portion and (ii) a principal face of the peripheral portion;
the plurality of side faces including:
side faces corresponding to level difference portions having a level difference; and
side faces corresponding to portions that have no level difference from the principal face of the first portion to the principal face of the peripheral portion, wherein

the level difference portions are arranged at two locations sandwiching the first portion therebetween, with the principal faces seen in plan view;
at least one face of the side faces corresponding to portions that have no level difference extends along a direction in which the two locations are aligned, and is connected to the level difference portions, and
the excitation electrodes are located at the first portion and the peripheral portion, extending over the level difference portions.

2. The piezoelectric vibration element according to claim 1 , wherein:
when, by using an X axis of an orthogonal coordinate system as a rotation axis, the orthogonal coordinate system being formed from the X axis as an electrical axis, a Y axis as a mechanical axis, and a Z axis as an optical axis, which are crystal axes of a crystal,
an axis acquired by inclining the Z axis such that a +Z side is rotated in a −Y direction of the Y axis is set as a Z′ axis,
an axis acquired by inclining the Y axis such that a +Y side is rotated in a +Z direction of the Z axis is set as a Y′ axis, and
a plane including the X axis and the Z′ axis is a principal face,

the piezoelectric substrate is a quartz crystal substrate that includes a pair of faces along the X axis and a pair of faces along the Z′ axis and has a thickness in a direction along the Y′ axis, and
the level difference portions extend along the Z′ axis.

3. The piezoelectric vibration element according to claim 2 , wherein:
the at least one face that has no level difference extends along the X axis.

4. The piezoelectric vibration element according to claim 2 , further comprising:
a pad that is arranged at least at any of corner portions of the front and rear principal faces of the piezoelectric substrate, the pad having a support area at a position at which the piezoelectric substrate is fixed to a support member, wherein:
when a length of the piezoelectric substrate along the X axis is X, a thickness of the first portion along the Y′ axis is t, and a length distance between (i) an end portion, among end portions of the support area, positioned at a side of the excitation electrodes and (ii) an end portion, among end portions of the excitation electrodes, positioned at a side of the pad is ΔX, a relationship of 14≤X/t≤18 and 0.04 mm≤ΔX≤0.06 mm is satisfied.

5. The piezoelectric vibration element according to claim 3 , further comprising:
a pad that is arranged at least at any of corner portions of the front and rear principal faces of the piezoelectric substrate, the pad having a support area at a position at which the piezoelectric substrate is fixed to a support member, wherein:
when a length of the piezoelectric substrate along the X axis is X, a thickness of the first portion along the Y′ axis is t, and a length distance between (i) an end portion, among end portions of the support area, positioned at a side of the excitation electrodes and (ii) an end portion, among end portions of the excitation electrodes, positioned at a side of the pad is ΔX, a relationship of 14≤X/t≤18 and 0.04 mm≤ΔX≤0.06 mm is satisfied.

6. The piezoelectric vibration element according to claim 2 , wherein:
when a length of the piezoelectric substrate along the Z′ axis is Z, a length of the excitation portion along the Z′ axis is Mz, and a thickness of the first portion along the Y′ axis is t, a relationship of 8≤Z/t≤11 and 0.6≤Mz/Z≤0.8 is satisfied.

7. The piezoelectric vibration element according to claim 3 , wherein:
when a length of the piezoelectric substrate along the Z′ axis is Z, a length of the excitation portion along the Z′ axis is Mz, and a thickness of the first portion along the Y′ axis is t, a relationship of 8≤Z/t≤11 and 0.6≤Mz/Z≤0.8 is satisfied.

8. The piezoelectric vibration element according to claim 4 , wherein:
when a length of the piezoelectric substrate along the Z′ axis is Z, a length of the excitation portion along the Z′ axis is Mz, and a thickness of the first portion along the Y′ axis is t, a relationship of 8≤Z/t≤11 and 0.6≤Mz/Z≤0.8 is satisfied.

9. The piezoelectric vibration element according to claim 5 , wherein:
when a length of the piezoelectric substrate along the Z′ axis is Z, a length of the excitation portion along the Z′ axis is Mz, and a thickness of the first portion along the Y′ axis is t, a relationship of 8≤Z/t≤11 and 0.6≤Mz/Z≤0.8 is satisfied.

10. A piezoelectric vibrator comprising:
the piezoelectric vibration element according to claim 1 , and:
a package that houses the piezoelectric vibration element.

11. A piezoelectric vibrator comprising:
the piezoelectric vibration element according to claim 2 , and:
a package that houses the piezoelectric vibration element.

12. A piezoelectric oscillator comprising:
the piezoelectric vibration element according to claim 1 ; and
an oscillation circuit that drives the piezoelectric vibration element.

13. A piezoelectric oscillator comprising:
the piezoelectric vibration element according to claim 2 ; and
an oscillation circuit that drives the piezoelectric vibration element.

14. The piezoelectric oscillator according to claim 12 , wherein:
the oscillation circuit is built in to an integrated circuit.

15. The piezoelectric oscillator according to claim 13 , wherein:
the oscillation circuit is built in to an integrated circuit.

16. An electronic device, comprising:
the piezoelectric vibration element according to claim 1 ; and
one or more electronic components.

17. An electronic device, comprising:
the piezoelectric vibration element according to claim 2 ; and
one or more electronic components.

18. The electronic device according to claim 16 , wherein:
the electronic component is any of a thermistor, a capacitor, a reactance element, or a semiconductor element.

19. The electronic device according to claim 17 , wherein:
the electronic component is any of a thermistor, a capacitor, a reactance element, or a semiconductor element.

Assignees

• Seiko Epson Corp

Inventors

• Il Toshihiro
• Naito Matsutaro

Classifications

• H03B5/36

  active element in amplifier being semiconductor device ({H03B5/323, H03B5/326} , H03B5/38 take precedence) · CPC title

• H03H9/1021

  the BAW device being of the cantilever type · CPC title

• H03H9/0552

  the device and the other elements being mounted on opposite sides of a common substrate · CPC title

• H03H9/19 Primary

  consisting of quartz · CPC title

• H03H9/0542

  consisting of a lateral arrangement (H03H9/0566 takes precedence) · CPC title