Device and method for permanent bonding

Patent metadata

Field	Value
Publication number	US-9947638-B2
Application number	US-201515306591-A
Country	US
Kind code	B2
Filing date	Apr 22, 2015
Priority date	May 5, 2014
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A method and corresponding device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate on a bond interface, characterized in that a dislocation density of a dislocation of the first and/or second layer is increased at least in the region of the bond interface before and/or during the bonding.

First claim

Having described the invention, the following is claimed:

1. A method for permanent bonding of a first layer of a first substrate to a second layer of a second substrate at a bond interface, the method comprising:
increasing a dislocation density of a dislocation in the first and/or second layer at least in the region of the bond interface before and/or during bonding of the first layer to the second layer, wherein the dislocation is a one-dimensional lattice defect,
mounting a substrate stack, comprised of the first and the second substrates, on a wafer chuck, the wafer chuck allowing a deformation of the first and/or the second layer,
wherein the wafer chuck and/or a pressure plate are concave and/or convex shaped during a pressure application to apply pressure on the entire surface of the substrate stack for bonding the first and the second layers, and
wherein the wafer chuck and/or the pressure plate are deformed before and/or during the pressure application to increase the dislocation density of the dislocation at least in the region of the bond interface.

2. The method as claimed in claim 1 , wherein the method further comprises:
increasing the dislocation density by delivering at least one oscillation, each oscillation applying a load to the substrate stack, wherein the at least one oscillation is delivered by an oscillation apparatus operating in the ultrasonic range.

3. The method as claimed in one of claim 1 , wherein a bond temperature is a maximum of 300° C. during bonding of the first layer to the second layer.

4. The method as claimed in claim 1 , wherein the first layer and/or the second layer is metallic and the first substrate and/or second substrate is a semiconductor.

5. The method as claimed in claim 2 , wherein delivering said at least one oscillation with a minimum resulting force that is greater than 0 superimposes a compressive force f on the first and the second substrates that acts transversely to the bond interfaces.

6. The method as claimed in claim 1 , wherein the dislocation density is increased by delivering a plurality of oscillations.

7. The method as claimed in claim 4 , wherein the first layer and/or the second layer is Cu.

8. A device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate at a bond interface, the device comprising:
a wafer chuck for receiving the first substrate, wherein a substrate stack comprised of the first and the second substrates is mounted on the wafer chuck, the wafer chuck allowing a deformation of the first layer and/or the second layer; and
a pressure plate for loading the first and the second substrates to increase a dislocation density of a dislocation of the first layer and/or the second layer at least in the region of the bond interface, wherein the dislocation is a one-dimensional lattice defect,
wherein the wafer chuck and/or the pressure plate is concave and/or convex shaped during a pressure application to apply pressure to the entire surface of the substrate stack for bonding the first and the second layers, and
wherein deformation of the wafer chuck and/or the pressure plate before and/or during the pressure application increases the dislocation density of the dislocation of the first layer and/or the second layer at least in the region of the bond interface.

9. The device as claimed in claim 8 , wherein the device further comprises:
locating bearings for supporting the wafer chuck and/or the pressure plate, wherein the wafer chuck and/or pressure plate are supported by the locating bearing on their respective back sides.

10. The device as claimed in claim 8 , wherein the loading of the first and the second substrates takes place by delivery of at least one oscillation, each oscillation applying a load to the substrate stack.

11. The device as claimed in claim 10 , wherein the loading of the first and the second substrates takes place by delivery of a plurality of oscillations.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Wimplinger Markus
• Rebhan Bernhard

Classifications

• H10P72/0428 Primary

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10W72/07333

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/07311

  Treating the bonding area before connecting, e.g. by applying flux or cleaning · CPC title

• H10W72/07141

  Means for applying energy, e.g. ovens or lasers · CPC title