Optical attenuator and fabrication method thereof

US9946023B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9946023-B2
Application numberUS-201514818453-A
CountryUS
Kind codeB2
Filing dateAug 5, 2015
Priority dateAug 5, 2015
Publication dateApr 17, 2018
Grant dateApr 17, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An optical attenuator and/or optical terminator is provided. The device includes an optical channel having two regions with different optical properties, such as an undoped silicon region which is less optically absorptive and a doped silicon region which is more optically absorptive. Other materials may also be used. A facet at the interface between the two regions is oriented at a non-perpendicular angle relative to a longitudinal axis of the channel. The angle can be configured to mitigate back reflection. Multiple facets may be included between different pairs of regions. The device may further include curved and/or tapers to further facilitate attenuation and/or optical termination.

First claim

Opening claim text (preview).

What is claimed is: 1. An optical attenuator comprising: a channel having a longitudinal axis, the channel comprising a first portion in contact with a second portion to define a facet therebetween, the first portion being an elongate optical waveguide having an axial length and a width, the axial length being greater than the width, the first portion comprising a first doped semiconductor material, the second portion and the first portion both aligned along the longitudinal axis in a vicinity of the facet, the second portion being more optically absorbing per unit length than the first portion and comprising another doped semiconductor material, wherein the facet extends across the channel and the longitudinal axis thereof and is at least partially oriented at a non-perpendicular angle relative to the longitudinal axis, and wherein the first portion and the second portion have equal cross-sectional areas in the vicinity of the facet, wherein the first doped semiconductor material has a lower dopant concentration than the second portion. 2. The optical attenuator of claim 1 , wherein the facet is at least partially oriented at between 20 and 60 degrees relative to the longitudinal axis. 3. The optical attenuator of claim 1 , wherein the channel further comprises a tapered section located away from the facet. 4. The optical attenuator of claim 1 , wherein the second portion comprises a curved section located away from the facet and forming a bend in the second portion. 5. The optical attenuator of claim 4 , wherein the curved section forms an adiabatic bend. 6. The optical attenuator of claim 4 , wherein the curved section is tapered. 7. The optical attenuator of claim 4 , wherein the curved section has a radius of curvature configured to divert light out of the channel through sidewalls of said curved section. 8. An optical attenuator comprising: a channel having a longitudinal axis, the channel comprising a first portion in contact with a second portion to define a facet therebetween, the first portion comprising a semiconductor material, the second portion and the first portion both aligned along the longitudinal axis in a vicinity of the facet, wherein the facet extends across the channel and the longitudinal axis thereof and is at least partially oriented at a non-perpendicular angle relative to the longitudinal axis, and wherein the first portion and the second portion have equal cross-sectional areas in the vicinity of the facet, wherein the channel further comprises a third portion in contact with the second portion to define a second facet therebetween, wherein the second facet is at least partially oriented at a second non-perpendicular angle to the longitudinal axis, and wherein the second and third portions comprise uniformly doped semiconductor materials, the third portion having a higher dopant concentration than the second portion. 9. An optical attenuator comprising: a channel having a longitudinal axis, the channel comprising a first portion in contact with a second portion to define a facet therebetween, the first portion being an elongate optical waveguide having an axial length and a width, the axial length being greater than the width, the first portion comprising a semiconductor material, the second portion and the first portion both aligned along the longitudinal axis in a vicinity of the facet, the second portion being more optically absorbing per unit length than the first portion and wherein the second portion comprises another semiconductor material, wherein the facet extends across the channel and the longitudinal axis thereof and is at least partially oriented at a non-perpendicular angle relative to the longitudinal axis, and wherein the first portion and the second portion have equal cross-sectional areas in the vicinity of the facet. 10. The optical attenuator of claim 9 , wherein the facet comprises a plane oriented at a non-perpendicular angle relative to the longitudinal axis. 11. The optical attenuator of claim 9 , wherein said another semiconductor material of the second portion is a doped semiconductor material. 12. The optical attenuator of claim 11 , wherein the doped semiconductor material comprises a dopant selected from the group consisting of boron, arsenic, phosphorus and gallium. 13. The optical attenuator of claim 11 , wherein the doped semiconductor material comprises a dopant concentration between 10 17 and 2×10 18 particles per cubic centimeter, and wherein the dopant concentration varies continuously along the channel in the direction of the longitudinal axis. 14. The optical attenuator of claim 9 , wherein one or both of the semiconductor material and said another semiconductor material is selected from the group consisting of diamond, silicon, germanium, silicon carbide, and silicon germanium. 15. The optical attenuator of claim 9 , wherein the channel further comprises a third portion in contact with the second portion to define a second facet therebetween, wherein the second facet is at least partially oriented at a second non-perpendicular angle to the longitudinal axis. 16. The optical attenuator of claim 9 , wherein the channel further comprises a tapered section located away from the facet. 17. The optical attenuator of claim 9 , wherein the first portion and the second portion each terminate at the facet. 18. The optical attenuator of claim 9 , wherein the channel is disposed overtop of a planar surface, and wherein the facet is non-perpendicular to the planar surface. 19. The optical attenuator of claim 9 , wherein the second portion comprises a curved section located away from the facet and forming a bend in the second portion. 20. The optical attenuator of claim 19 , wherein the curved section forms an adiabatic bend. 21. The optical attenuator of claim 19 , wherein the curved section is tapered. 22. The optical attenuator of claim 19 , wherein the curved section has a radius of curvature configured to divert light out of the channel through sidewalls of said curved section. 23. The optical attenuator of claim 9 , wherein the facet is at least partially oriented at between 20 and 60 degrees relative to the longitudinal axis.

Assignees

Inventors

Classifications

  • Light absorber · CPC title

  • G02B6/243Primary

    as light absorbers · CPC title

  • Basic optical elements, e.g. light-guiding paths · CPC title

  • by etching · CPC title

  • by using epitaxial growth (epitaxial growth for semiconductors H10P14/20) · CPC title

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What does patent US9946023B2 cover?
An optical attenuator and/or optical terminator is provided. The device includes an optical channel having two regions with different optical properties, such as an undoped silicon region which is less optically absorptive and a doped silicon region which is more optically absorptive. Other materials may also be used. A facet at the interface between the two regions is oriented at a non-perpend…
Who is the assignee on this patent?
Dumais Patrick, Celo Dritan, Huawei Tech Co Ltd
What technology area does this patent fall under?
Primary CPC classification G02B6/243. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).