Crystal-pulling method for pulling monocrystalline silicon
US-2024084478-A1 · Mar 14, 2024 · US
Method of producing silicon single crystal
US9938634B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9938634-B2 |
| Application number | US-201414787368-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 8, 2014 |
| Priority date | May 29, 2013 |
| Publication date | Apr 10, 2018 |
| Grant date | Apr 10, 2018 |
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Abstract
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A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10 16 atoms/cm 3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×10 18 atoms/cm 3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×10 18 atoms/cm 3 (ASTM'79) or more.
First claim
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The invention claimed is: 1. A method of producing a phosphorus-doped silicon single crystal, comprising pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10 16 atoms/cm 3 or more, a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×10 18 atoms/cm 3 or more, and the oxygen concentration is constant over substantially the entire length of a straight body of the crystal. 2. The method according to claim 1 , wherein the step of pulling the phosphorus-doped silicon single crystal includes adjusting a pressure of an interior of a furnace in a single-crystal pulling apparatus for use in pulling the phosphorus-doped silicon single crystal to 100 hPa or more. 3. The method according to claim 1 , wherein the magnetic field strength 3,000 to 5,000 gauss.
Assignees
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Classifications
using magnetic fields · CPC title
Stirring of the melt · CPC title
- C30B15/04Primary
adding doping materials, e.g. for n-p-junction · CPC title
Silicon · CPC title
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- What does patent US9938634B2 cover?
- A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10 16 atoms/cm 3 or more, and a horizontal magnetic f…
- Who is the assignee on this patent?
- Shinetsu Handotai Kk
- What technology area does this patent fall under?
- Primary CPC classification C30B15/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 10 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).