Semiconductor package, smart card and method for producing a semiconductor package

Patent metadata

Field	Value
Publication number	US-9935042-B2
Application number	US-201715609136-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	May 31, 2016
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A semiconductor package includes a chip, a layer which is thermally coupled to the chip and which is formed from a material having a triggering temperature of greater than or equal to 200° C., starting from which an exothermic reaction takes place, and encapsulating material which at least partly covers the chip and the layer. The layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction.

First claim

What is claimed is:

1. A semiconductor package, comprising:
a chip;
a layer which is thermally coupled to the chip and which is formed from a material having a triggering temperature of greater than or equal to 200° C., starting from which an exothermic reaction takes place; and
an encapsulating material which at least partly covers the chip and the layer;
wherein the layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction;
wherein the layer is a thermodynamically metastable inorganic layer, and wherein the material of the thermodynamically metastable inorganic layer is an Li-based compound.

2. The semiconductor package of claim 1 ,
wherein the Li-based compound is an Li metal oxide.

3. The semiconductor package of claim 1 ,
wherein the Li-based compound is an Li-based compound comprising one or more transition metals.

4. The semiconductor package of claim 1 ,
wherein the layer has a layer thickness of at least 10 μm.

5. The semiconductor package of claim 1 ,
wherein the encapsulating material comprises or is formed from a highly crosslinked encapsulating material.

6. The semiconductor package of claim 1 ,
wherein a temperature increase by at least 400° C. takes place at the at least one component of the chip.

7. The semiconductor package of claim 1 ,
wherein, upon triggering of an exothermic reaction of the material of the layer, the triggered exothermic reaction takes place in an oxygen-containing environment.

8. A method for producing a semiconductor package, the method comprising:
thermally coupling a layer to a chip, which layer is formed from a material having a triggering temperature of greater than or equal to 200° C., starting from which an exothermic reaction takes place; and
at least partly covering the chip and the layer with an encapsulating material;
wherein the layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction;
wherein the layer is a thermodynamically metastable inorganic layer, and wherein the material of the thermodynamically metastable inorganic layer is an Li-based compound.

9. A smart card, comprising:
a smart card body; and
a semiconductor package, comprising:
a chip;
a layer which is thermally coupled to the chip and which is formed from a material having a triggering temperature of greater than or equal to 200° C., starting from which an exothermic reaction takes place; and
an encapsulating material which at least partly covers the chip and the layer;
wherein the layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction;
wherein the layer is a thermodynamically metastable inorganic layer, and wherein the material of the thermodynamically metastable inorganic layer is an Li-based compound.

Assignees

• Infineon Technologies Ag

Inventors

• Spoettl Thomas
• Pueschner Frank
• Ruhl Guenther
• Stampka Peter

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/851

  Dispositions of multiple connectors or interconnections · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title

• H10W70/699

  for flat cards, e.g. credit cards · CPC title