Target adapted to an indirect cooling device

Patent metadata

Field	Value
Publication number	US-9934951-B2
Application number	US-201314390828-A
Country	US
Kind code	B2
Filing date	Mar 5, 2013
Priority date	Apr 4, 2012
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

The invention relates to a target which is embodied as a material source for a depositing method from the gas phase, comprising a front side and a rear side, characterized in that a self-adhesive carbon film is applied to the rear side. Said target can be embodied as a material source for a sputtering method and/or for an arc evaporation method. A particular advantage is that the target is used in a coating source with indirect cooling, the self-adhesive carbon film being in contact with the surface of the membrane which is part of a cooling channel.

First claim

What is claimed is:

1. Method for coating substrates, the method comprising the steps of:
placing a coating source on a source holder; and
depositing a layer by a sputtering process using the coating source,
wherein the coating source comprises a metal target ( 601 , 701 ) and a self-adhesive carbon film, the metal target ( 601 ), ( 701 ) having a front side and a rear side,
wherein the layer is deposited by using the coating source comprising the metal target ( 601 , 701 ), whose rear side is placed on one wall of the source holder ( 605 ) into which an indirect cooling with a cooling channel ( 609 ) is integrated, wherein the metal target ( 601 , 701 ) is fastened onto the source holder ( 605 ) through suitable measures and the one wall of the source holder ( 605 ) onto which the metal target ( 601 , 701 ) is fastened is executed as a flexible membrane ( 603 ), which separates the cooling channel ( 609 ) from the rear side of the metal target ( 601 , 701 ), the coating source characterized in that the self-adhesive carbon film ( 607 , 705 ) comprises a carbon film having an adhesive film on one side of the carbon film, wherein the self-adhesive carbon film is adhered directly to the metal target and the adhesive film is positioned between the carbon film and the metal target, and
wherein the self-adhesive carbon film ( 607 , 705 ) is adhered in such a manner that when the flexible membrane ( 603 ) is pressed uniformly on the rear side of the metal target ( 601 , 701 ) during the sputtering process due to a hydrostatic pressure prevailing in the cooling channel ( 609 ), the metal target ( 601 , 701 ) is also pressed onto the self-adhesive carbon film ( 607 , 705 ) in such a manner that thermal contact between the flexible membrane ( 603 ) and the rear side of the metal target ( 601 , 701 ) results, which enables the temperature of the metal target ( 601 , 701 ) to be held so low that an output tolerance of the metal target ( 601 , 701 ) with the self-adhesive carbon film ( 607 , 705 ), as compared with the output tolerance of the same metal target in the same coating source but without self-adhesive carbon film ( 607 , 705 ), is at least doubled.

2. Method according to claim 1 , characterized in that the temperature of the metal target is held below 200° C.

3. Method according to claim 2 , characterized in that a sputtering output at the metal target of up to 10 kW is used.

4. Method according to claim 1 , characterized in that a target power density of up to 100 W/cm 2 is used.

5. Method according to claim 1 , characterized in that the used metal target is an AlTi, AlCr, Al, Ti, TiCr or Cr target.

6. Method according to claim 1 , wherein a thickness of the metal target ( 601 , 701 ) is between 6 mm and 18 mm.

7. Method according to claim 1 , wherein the metal target ( 601 , 701 ) is produced by a powder-metallurgical process.

8. Method according to claim 1 , wherein the thickness of the self-adhesive carbon film ( 607 , 705 ) is 0.125 mm.

9. Method according to claim 6 , wherein the thickness of the metal target ( 601 , 701 ) is between 6 mm to 12 mm.

10. Method for coating substrates, the method comprising steps of:
placing a coating source on a source holder; and
depositing a layer by a sputtering process using the coating source,
wherein the coating source comprises a metal target ( 601 , 701 ) and a self-adhesive carbon film, the metal target ( 601 ), ( 701 ) having a front side and a rear side,
wherein the layer is deposited by using the coating source comprising the metal target ( 601 , 701 ), whose rear side is placed on one wall of the source holder ( 605 ) into which an indirect cooling with a cooling channel ( 609 ) is integrated, wherein the metal target ( 601 , 701 ) is fastened onto the source holder ( 605 ) through suitable measures and the one wall of the source holder ( 605 ) onto which the metal target ( 601 , 701 ) is fastened is executed as a flexible membrane ( 603 ), which separates the cooling channel ( 609 ) from the rear side of the metal target ( 601 , 701 ), the coating source characterized in that the self-adhesive carbon film ( 607 , 705 ) comprises a carbon film having an adhesive film on one side of the carbon film, wherein the self-adhesive carbon film is adhered directly to the metal target and the adhesive film is positioned between the carbon film and the metal target,
wherein the metal target with the self-adhesive carbon film has an output tolerance more than doubled in comparison with the metal target without the self-adhesive carbon film.

11. Method according to claim 1 , wherein the thickness of the self-adhesive carbon film ( 607 , 705 ) is between 0.1 mm and 0.5 mm.

12. Method according to claim 10 , wherein the thickness of the self-adhesive carbon film ( 607 , 705 ) is between 0.1 mm and 0.5 mm.

Assignees

• Oerlikon Surface Solutions Ag Trubbach
• Oerlikon Surface Solutions Ag Pfaeffikon

Inventors

• Krassnitzer Siegfried
• Hagmann Juerg

Classifications

• C23C14/34

  Sputtering · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title

• H01J37/3411

  Constructional aspects of the reactor · CPC title

• H01J2237/002

  Cooling arrangements · CPC title

• C09J7/026

  Chemistry & Metallurgy · mapped topic