Apparatus for PVD dielectric deposition

Patent metadata

Field	Value
Publication number	US-9928997-B2
Application number	US-201514616895-A
Country	US
Kind code	B2
Filing date	Feb 9, 2015
Priority date	Dec 14, 2014
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

First claim

The invention claimed is:

1. A chamber lid of a physical vapor deposition chamber, comprising:
an inner magnetron assembly coupled to an inner target assembly, wherein the inner magnetron assembly includes a plurality of inner magnets disposed in an inner magnetron housing that is fluidly sealed and configured to hold a cooling liquid; and
an outer magnetron assembly coupled to an outer target assembly, wherein the outer magnetron assembly includes a one or more pairs of outer magnets disposed in an outer magnetron housing that includes one or more fluid channels that are fluidly coupled to a coolant channel formed in an outer target backing plate of the outer target assembly, and wherein the inner magnetron assembly, inner magnetron housing, and the inner target assembly are electrically isolated from the outer magnet assembly, outer magnetron housing, and the outer target assembly.

2. The chamber lid of claim 1 , wherein the inner magnetron assembly includes a rotating magnetron, and wherein the outer magnetron assembly includes one or more stationary magnets.

3. The chamber lid of claim 1 , wherein the inner magnetron assembly is coupled to a DC power source that is configured to provide DC pulsed power to the inner target assembly via the inner magnetron assembly.

4. The chamber lid of claim 3 , wherein the outer magnetron assembly is coupled to the DC power source that is configured to provide DC pulsed power to the outer target assembly via the outer magnetron assembly.

5. The chamber lid of claim 4 , wherein the DC power source is configured to provide pulsed DC power independently to the inner target assembly and the outer target assembly.

6. The chamber lid of claim 1 , wherein the inner magnetron assembly includes a plurality of pairs of magnets coupled to a rotating shunt.

7. The chamber lid of claim 1 , wherein the outer magnetron assembly includes an outer pair of magnets coupled to a non-rotating shunt.

8. The chamber lid of claim 7 , wherein the non-rotating shunt is vertically movable to adjust a vertical distance of the outer pair of magnets from the outer target assembly.

9. The chamber lid of claim 1 , wherein a gap disposed between the inner target assembly and the outer target assembly is about 0.5 mm to about 2.5 mm wide and disposed beneath a pair of inner magnets included in the inner magnetron assembly.

10. A physical vapor deposition chamber, comprising:
an inner magnetron assembly electrically coupled to an inner target assembly, wherein the inner magnetron assembly includes an inner magnetron housing configured to contain a coolant; and
an outer magnetron assembly electrically coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly, wherein the outer target assembly includes an outer target backing plate including a coolant channel, and wherein the outer magnet assembly includes an outer magnetron housing with a coolant channel formed therein to supply coolant to the coolant channel formed in the outer target assembly.

11. The physical vapor deposition chamber of claim 10 , wherein the inner magnetron assembly includes a rotating magnetron, and wherein the outer magnetron assembly includes one or more stationary magnets.

12. The physical vapor deposition chamber of claim 10 , wherein the inner magnetron housing is coupled to a DC power source that is configured to provide DC pulsed power to the inner target assembly via the inner magnetron housing.

13. The physical vapor deposition chamber of claim 12 , wherein the outer magnetron housing is coupled to the DC power source that is configured to provide DC pulsed power to the outer target assembly via the outer magnetron housing.

14. The physical vapor deposition chamber of claim 13 , wherein the DC power source is configured to provide pulsed DC power independently to the inner target assembly and the outer target assembly.

15. The physical vapor deposition chamber of claim 10 , wherein the inner magnetron assembly includes a plurality of pairs of magnets coupled to a rotating shunt.

16. The physical vapor deposition chamber of claim 10 , wherein the outer magnetron assembly includes an outer pair of magnets coupled to a non-rotating shunt.

17. The physical vapor deposition chamber of claim 16 , wherein the non-rotating shunt is vertically movable to adjust a vertical distance of the outer pair of magnets from the outer target assembly.

18. A physical vapor deposition chamber, comprising:
a chamber body having a first volume;
a chamber lid disposed atop the chamber body, comprising:
an inner rotating magnetron assembly electrically coupled to an inner target assembly, wherein the inner magnetron assembly includes a plurality of inner magnets disposed in an inner magnetron housing that is fluidly sealed and configured to hold a cooling liquid; and
an outer non-rotating magnetron assembly electrically coupled to an outer target assembly, wherein the outer non-rotating magnetron assembly includes a one or more pairs of outer magnets disposed in an outer magnetron housing includes one or more fluid channels that are fluidly coupled to a coolant channel formed in an outer target backing plate of the outer target assembly, and wherein the inner rotating magnetron assembly and the inner target assembly are electrically isolated from the outer non-rotating magnet assembly and the outer target assembly;

a DC power source that is configured to provide DC pulsed power to the inner target assembly and the outer target assembly;
a substrate support disposed within the first volume, opposite the inner target assembly and the outer target assembly, and having a substrate processing surface; and
a shield disposed within the chamber body comprising one or more sidewalls configured to surround the first volume, wherein the shield extends downwardly to below a top surface of the substrate.

Assignees

• Applied Materials Inc

Inventors

• Miller Keith A
• Nguyen Thanh X
• Lavitsky Ilya
• Schmieding Randy
• Kothnur Prashanth

Classifications

• H01J37/3467

  Pulsed operation, e.g. HIPIMS · CPC title

• H01J37/3452 Primary

  Magnet distribution · CPC title

• C23C14/345

  using substrate bias · CPC title

• H01J37/3417

  Arrangements · CPC title

• H01J37/3408

  Planar magnetron sputtering · CPC title