Method of making a bottom shield stabilized magnetic seed layer

US9928857B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9928857-B2
Application numberUS-201514799354-A
CountryUS
Kind codeB2
Filing dateJul 14, 2015
Priority dateMar 16, 2013
Publication dateMar 27, 2018
Grant dateMar 27, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A data reader generally capable of sensing data bits may be configured at least with a magnetic stack that has free and fixed magnetization structures atop a magnetic seed layer. A bottom shield may be positioned contactingly adjacent the magnetic stack opposite a top shield with the bottom shield having a fixed pinning magnetization set to a predetermined magnetic orientation.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: depositing a shield layer; forming a shield fixed magnetization structure atop the shield layer; depositing a first stop layer on the shield fixed magnetization structure; depositing a pattern on the shield fixed magnetization structure, the pattern shaped with a first width contacting the shield layer and a greater second width distal the shield layer, the first and second widths defining first and second notches; backfilling an insulating material to partially fill each notch; depositing a second stop layer on the insulating material and pattern; lifting off the pattern, insulating material, first stop layer, and second stop layer; forming a magnetic seed layer on the shield layer; and depositing a magnetic stack atop the magnetic seed layer, the magnetic stack comprising free and stack fixed magnetization structures. 2. The method of claim 1 , wherein the stack fixed magnetization structure of the magnetic stack comprises a synthetic antiferromagnet (SAF). 3. The method of claim 1 , further comprising disposing an antiferromagnet (AFM) between the magnetic seed and the fixed magnetization structure of the magnetic stack. 4. The method of claim 1 , wherein the shield fixed magnetization structure comprising a synthetic antiferromagnet (SAF) pinned by an antiferromagnet. 5. The method of claim 1 , wherein the lifting off step produces no undersprayed insulating material. 6. The method of claim 1 , wherein the magnetic stack has a trapezoidal shape with the magnetic seed layer having a greater width on an air bearing surface than the free magnetization structure. 7. The method of claim 1 , wherein the lifting off step produces a first texture that is less than a second texture corresponding with a knock off process. 8. The method of claim 1 , wherein the magnetic stack has a grain size of less than 12 nm. 9. The method of claim 1 , wherein the magnetic stack is disposed between side shields. 10. The method of claim 9 , wherein each side shield is separated from the magnetic stack by an insulating layer that continuously extends to separate the respective side shields from the shield fixed magnetization structure. 11. The method of claim 1 , wherein an annealing operation is conducted after the lifting off step to set a magnetization orientation in the shield fixed magnetization structure. 12. The method of claim 11 , wherein the magnetization orientation is canted 10-80° with respect to an air bearing surface. 13. The method of claim 1 , wherein the shield layer is coupled to the magnetic seed layer. 14. The method of claim 1 , wherein the first stop layer continuously extends laterally beyond the second width of the pattern. 15. The method of claim 1 , wherein an annealing operation is conducted on the shield fixed magnetization structure to provide a less than 12 nm grain size. 16. The method of claim 1 , wherein a magnetic orientation for the shield fixed magnetization structure is provided by a plurality of annealing operations. 17. The method of claim 16 , wherein first and second annealing operations configure the shield fixed magnetization structure with first and second fixed pinning magnetizations, the first and second fixed pinning magnetizations set to different, orthogonal orientations.

Assignees

Inventors

Classifications

  • Methods of surface bonding and/or assembly therefor · CPC title

  • G11B5/3116Primary

    Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title

  • G11B5/3163Primary

    Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers · CPC title

  • large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title

  • Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

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What does patent US9928857B2 cover?
A data reader generally capable of sensing data bits may be configured at least with a magnetic stack that has free and fixed magnetization structures atop a magnetic seed layer. A bottom shield may be positioned contactingly adjacent the magnetic stack opposite a top shield with the bottom shield having a fixed pinning magnetization set to a predetermined magnetic orientation.
Who is the assignee on this patent?
Seagate Technology Llc
What technology area does this patent fall under?
Primary CPC classification G11B5/3116. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).