Sensor stack structure with RKKY coupling layer between free layer and capping layer
US-9633679-B2 · Apr 25, 2017 · US
US9928857B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9928857-B2 |
| Application number | US-201514799354-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 14, 2015 |
| Priority date | Mar 16, 2013 |
| Publication date | Mar 27, 2018 |
| Grant date | Mar 27, 2018 |
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A data reader generally capable of sensing data bits may be configured at least with a magnetic stack that has free and fixed magnetization structures atop a magnetic seed layer. A bottom shield may be positioned contactingly adjacent the magnetic stack opposite a top shield with the bottom shield having a fixed pinning magnetization set to a predetermined magnetic orientation.
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What is claimed is: 1. A method comprising: depositing a shield layer; forming a shield fixed magnetization structure atop the shield layer; depositing a first stop layer on the shield fixed magnetization structure; depositing a pattern on the shield fixed magnetization structure, the pattern shaped with a first width contacting the shield layer and a greater second width distal the shield layer, the first and second widths defining first and second notches; backfilling an insulating material to partially fill each notch; depositing a second stop layer on the insulating material and pattern; lifting off the pattern, insulating material, first stop layer, and second stop layer; forming a magnetic seed layer on the shield layer; and depositing a magnetic stack atop the magnetic seed layer, the magnetic stack comprising free and stack fixed magnetization structures. 2. The method of claim 1 , wherein the stack fixed magnetization structure of the magnetic stack comprises a synthetic antiferromagnet (SAF). 3. The method of claim 1 , further comprising disposing an antiferromagnet (AFM) between the magnetic seed and the fixed magnetization structure of the magnetic stack. 4. The method of claim 1 , wherein the shield fixed magnetization structure comprising a synthetic antiferromagnet (SAF) pinned by an antiferromagnet. 5. The method of claim 1 , wherein the lifting off step produces no undersprayed insulating material. 6. The method of claim 1 , wherein the magnetic stack has a trapezoidal shape with the magnetic seed layer having a greater width on an air bearing surface than the free magnetization structure. 7. The method of claim 1 , wherein the lifting off step produces a first texture that is less than a second texture corresponding with a knock off process. 8. The method of claim 1 , wherein the magnetic stack has a grain size of less than 12 nm. 9. The method of claim 1 , wherein the magnetic stack is disposed between side shields. 10. The method of claim 9 , wherein each side shield is separated from the magnetic stack by an insulating layer that continuously extends to separate the respective side shields from the shield fixed magnetization structure. 11. The method of claim 1 , wherein an annealing operation is conducted after the lifting off step to set a magnetization orientation in the shield fixed magnetization structure. 12. The method of claim 11 , wherein the magnetization orientation is canted 10-80° with respect to an air bearing surface. 13. The method of claim 1 , wherein the shield layer is coupled to the magnetic seed layer. 14. The method of claim 1 , wherein the first stop layer continuously extends laterally beyond the second width of the pattern. 15. The method of claim 1 , wherein an annealing operation is conducted on the shield fixed magnetization structure to provide a less than 12 nm grain size. 16. The method of claim 1 , wherein a magnetic orientation for the shield fixed magnetization structure is provided by a plurality of annealing operations. 17. The method of claim 16 , wherein first and second annealing operations configure the shield fixed magnetization structure with first and second fixed pinning magnetizations, the first and second fixed pinning magnetizations set to different, orthogonal orientations.
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