Sensor stack structure with RKKY coupling layer between free layer and capping layer

Patent metadata

Field	Value
Publication number	US-9633679-B2
Application number	US-201414270593-A
Country	US
Kind code	B2
Filing date	May 6, 2014
Priority date	May 6, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

First claim

What is claimed is:

1. A method comprising:
biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) shield using a layer having RKKY coupling property, the RKKY coupling layer positioned in contact with and adjacent to the free layer and in contact with and adjacent to a magnetic capping layer comprising CoFeX, where X is a refractory metal, that is in contact with and adjacent to the top SAF shield, the top SAF shield comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween, the reader stack further having a sensor SAF layer comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween, the sensor SAF layer on a side of the free layer opposite the RKKY coupling layer, with only a barrier layer between the sensor SAF layer and the free layer.

2. The method of claim 1 , wherein the refractory metal is a Group IVB or Group VB transition metal.

3. The method of claim 1 , wherein the CoFeX comprises X in the range of 1 to 30 atomic percent.

4. The method of claim 1 , wherein providing the exchange coupling between the free layer and the top synthetic antiferromagnetic (SAF) shield further comprises providing ferromagnetic coupling between the free layer and the top synthetic antiferromagnetic (SAF) shield.

5. The method of claim 1 , wherein providing the exchange coupling between the free layer and the top synthetic antiferromagnetic (SAF) shield further comprises providing anti-ferromagnetic coupling between the free layer and the top synthetic antiferromagnetic (SAF) shield.

6. The method of claim 1 , further comprising biasing the free layer using side shields located on two sides of the free layer along a cross-track direction.

7. The method of claim 6 , wherein the biasing provided by the side shields and the biasing provided by the top SAF shield are in the same direction.

8. The method of claim 6 , wherein the biasing provided by the side shields and the biasing provided by the top SAF shield are in opposite directions.

9. A reader stack comprising:
a top synthetic antiferromagnetic (SAF) shield comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween;
a magnetic capping layer in contact with and adjacent to the top SAF shield, the magnetic capping layer comprising CoFeX, where X is a refractory metal;
an RKKY coupling layer in contact with and adjacent to the magnetic capping layer opposite the top SAF shield;
a free layer in contact with and adjacent to the RKKY coupling layer opposite the magnetic capping layer;
a barrier layer in contact with and adjacent to the free layer opposite the RKKY coupling layer; and
a sensor SAF layer in contact with and adjacent to the barrier layer opposite the free layer, the sensor SAF layer comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween.

10. The reader stack of claim 9 , further comprising first and second side shields located on two sides of the free layer along a cross-track direction.

11. The reader stack of claim 10 wherein the first and second side shields are SAF side shields.

12. The reader stack of claim 10 wherein the first and second side shields are non-magnetic side shields.

13. The reader stack of claim 10 wherein the first and second side shields are permanent magnet side shields.

14. The reader stack of claim 9 wherein the refractory metal is a Group IVB or Group VB transition metal.

15. A reader stack comprising:
a top synthetic antiferromagnetic (SAF) shield comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween;
a magnetic capping layer in contact with and adjacent to the top SAF shield, the magnetic capping layer comprising CoFeX, where X is a refractory metal;
an RKKY coupling layer in contact with and adjacent to the magnetic capping layer opposite the top SAF shield;
a free layer in contact with and adjacent to the RKKY coupling layer opposite the magnetic capping layer;
a barrier layer in contact with and adjacent to the free layer opposite the RKKY coupling layer;
a sensor SAF layer in contact with and adjacent to the barrier layer opposite the free layer, the sensor SAF layer comprising a ferromagnetic pinned layer, a ferromagnetic reference layer, and a spacer layer therebetween; and
magnetic side shields present along a cross-track direction encompassing all of the sensor SAF layer, the barrier layer, the free layer, the RKKY coupling layer, and the magnetic capping layer.

16. The reader stack of claim 15 , wherein the refractory metal is a Group IVB or Group VB transition metal.

17. The reader stack of claim 15 , wherein the CoFeX comprises X in the range of 1 to 30 atomic percent.

Assignees

• Seagate Technology Llc

Inventors

• Singleton Eric W
• Tan Liwen
• Yi Jae-Young
• Nikolaev Konstantin
• Ge Zhiguo

Classifications

• G11B5/3153

  including at least one magnetic thin film coupled by interfacing to the basic magnetic thin film structure · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11B5/3912 Primary

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B5/3932

  Magnetic biasing films · CPC title

• G11B5/3958

  the active elements being arranged in a single plane, e.g. "matrix" disposition · CPC title