Film forming method and film forming apparatus

Patent metadata

Field	Value
Publication number	US-9922820-B2
Application number	US-201715420579-A
Country	US
Kind code	B2
Filing date	Jan 31, 2017
Priority date	Feb 2, 2016
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

First claim

What is claimed is:

1. A method of forming a silicon nitride film on a substrate in a vacuum vessel, comprising:
forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times, the cycle including:
a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate;
subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate; and
subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product,
wherein the silicon nitride film is formed so as to cover a carbon film on the substrate in which a pattern of the carbon film is exposed on a surface of the substrate.

2. The method of claim 1 , wherein the second process comprises heating the substrate to 150 to 650 degrees C. in order to physically adsorb the gas of the ammonia.

3. The method of claim 1 , further comprising revolving the substrate loaded on a rotary table installed in the vacuum vessel,
wherein the first process comprises supplying the gas of the silicon raw material to a first processing part in a passing region of the substrate on the rotary table,
the second process comprises supplying the gas of the ammonia in a non-plasma state to a second processing part located at a downstream side of the first processing part in a rotational direction of the rotary table in the passing region of the substrate, and
the third process comprises supplying the active species to a third processing part located at a downstream side of the second processing part in the rotational direction of the rotary table in the passing region of the substrate, and
wherein the method comprises separating the second processing part and the third processing part from the first processing part in order to suppress gases from being mixed.

4. An apparatus for forming a silicon nitride film on a substrate, comprising:
a rotary table installed in a vacuum vessel and configured to revolve the substrate;
a first processing part configured to supply a silicon raw material gas to a passing region of the substrate above the rotary table;
a second processing part located at a downstream side of the first processing part in a rotational direction of the rotary table and separated from the first processing part in order to suppress gases from being mixed, and configured to supply an ammonia gas in a non-plasma state to the passing region of the substrate to physically adsorb the ammonia gas to the substrate; and
a third processing part located at a downstream side of the second processing part in a rotational direction of the rotary table and separated from the first processing part in order to suppress gases from being mixed, and configured to supply active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the passing region of the substrate,
wherein the silicon nitride film is formed so as to cover a carbon film on the substrate in which a pattern of the carbon film is exposed on a surface of the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Fukiage Noriaki
• KARAKAWA Takayuki
• Kamada Toyohiro
• Kuribayashi Akihiro
• Oyama Takeshi
• Ogawa Jun

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title