Method and apparatus for non-contact measurement of sheet resistance and shunt resistance of p-n junctions

Patent metadata

Field	Value
Publication number	US-9921261-B2
Application number	US-201414516556-A
Country	US
Kind code	B2
Filing date	Oct 16, 2014
Priority date	Oct 17, 2013
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

Non-Contact measurement of characteristics of p-n junctions includes illuminating an illumination area of a surface of a p-n junction with light, measuring a first junction photovoltage (JPV) signal from a first area of the p-n junction with a first electrode, measuring a second JPV signal from a second area with a second electrode, measuring a third JPV signal from a third area with a reference electrode, and determining a sheet resistance of the p-n junction top layer with a corrected first JPV signal, a corrected second JPV signal, a corrected first calibration JPV signal, a corrected second calibration JPV signal or the known sheet resistance of the calibration p-n junction.

First claim

What is claimed:

1. An apparatus for contactless measurement of one or more characteristics of one or more p-n junction layers of a semiconductor substrate comprising:
an illumination unit including an illumination source for illuminating an illumination area of a first surface of semiconductor substrate including a p-n junction with light including at least one of intensity modulated light or pulsed light;
a first junction photovoltage measurement unit including at least a first electrode positioned proximate to the first surface of the p-n junction, the first electrode position within the illumination area or at least laterally proximate to the illumination area;
a second junction photovoltage measurement unit including at least a second electrode positioned proximate to the first surface of the p-n junction, the second electrode laterally positioned proximate to the first electrode;
a third junction photovoltage measurement unit including at least a reference electrode positioned proximate to the first surface of the p-n junction, the reference electrode laterally positioned outside of the illumination area;
a controller communicatively coupled to at least one of the first junction photovoltage measurement unit, the second junction photovoltage measurement unit or the third junction photovoltage unit, the controller configured to:
receive a first junction photovoltage signal for the p-n junction and a first calibration junction photovoltage signal for a calibration p-n junction from the first junction photovoltage measurement unit;
receive a second junction photovoltage signal for the p-n junction and a second calibration junction photovoltage signal for the calibration p-n junction from the second junction photovoltage measurement unit;
receive a third junction photovoltage signal for the p-n junction and a third calibration junction photovoltage signal for the calibration p-n junction from the third junction photovoltage measurement unit;
determine at least one of a corrected first junction photovoltage signal or a corrected second junction photovoltage signal with at least one of the received first junction photovoltage signal, the received second junction photovoltage signal or the received third junction photovoltage signal from the reference electrode, wherein the corrected first junction photovoltage signal is determined as a function of the first junction photovoltage signal from the first electrode and the third junction photovoltage from the reference electrode, wherein the corrected second junction photovoltage signal is determined as a function of the second photovoltage from the second electrode and the third junction photovoltage from the reference electrode;
determine at least one of a corrected first calibration junction photovoltage signal or a corrected second calibration junction photovoltage signal with at least one of the received first calibration junction photovoltage signal, the received second calibration junction photovoltage signal or the received third calibration junction photovoltage signal; and
determine a sheet resistance of the p-n junction of the semiconductor substrate with at least one of the corrected first junction photovoltage signal, the corrected second junction photovoltage signal, the corrected first calibration junction photovoltage signal, the corrected second calibration junction photovoltage signal or the known sheet resistance of the calibration p-n junction.

2. The apparatus of claim 1 , wherein the first electrode is a transparent electrode positioned within the illumination area, wherein the first electrode is configured to transmit illumination from the illumination source to the first surface of the p-n junction.

3. The apparatus of claim 2 , wherein the first electrode comprises:
a transparent conducting oxide (TCO) coating disposed on a transparent substrate.

4. The apparatus of claim 3 , wherein the transparent substrate comprises:
at least one of a quartz, sapphire or glass substrate.

5. The apparatus of claim 1 , wherein the first electrode is an opaque electrode positioned outside and proximate to the illumination area.

6. The apparatus of claim 5 , wherein the first electrode is arranged concentrically with the illumination area.

7. The apparatus of claim 1 , wherein the second electrode is an opaque electrode positioned outside of the illumination area and proximate to the first electrode.

8. The apparatus of claim 7 , wherein the second electrode is arranged concentrically with the first electrode.

9. The apparatus of claim 1 , further comprising:
a grounded electrode surrounding at least one of the first electrode or the second electrode.

10. The apparatus of claim 1 , wherein the reference electrode is an opaque electrode positioned outside the illumination area, the reference electrode at a greater distance from the illumination area than at least one of the first electrode or the second electrode.

11. The apparatus of claim 10 , further comprising:
a grounded electrode surrounding the reference electrode.

12. The apparatus of claim 1 , wherein the first surface of the p-n junction comprises:
a front surface of the p-n junction.

13. The apparatus of claim 1 , further comprising:
a fourth junction photovoltage measurement unit including a fourth electrode coextensive with a fourth area of the first surface of the p-n junction, the fourth electrode surrounding at least one of the first electrode or the second electrode.

14. The apparatus of claim 13 , wherein the controller is further configured to:
receive a fourth junction photovoltage signal for the fourth area of the surface of p-n junction from the fourth electrode encompassing at least one of first electrode or the second electrode; and
summing the first junction photovoltage, the second junction photovoltage and the fourth junction photovoltage to form a summed junction photovoltage signal.

15. The apparatus of claim 14 , wherein the controller is further configured to:
determine a shunt resistance of the p-n junction based on the frequency dependence of the summed junction photovoltage signal.

16. The apparatus of claim 14 , wherein the controller is further configured to:
determine a shunt resistance of the p-n junction based on the decay of the summed junction photovoltage signal generated via pulsed light.

17. The apparatus of claim 13 , wherein at least one of the first junction photovoltage measurement unit, the second junction photovoltage measurement unit, the third junction photovoltage measurement unit or the fourth junction photovoltage measurement unit further includes:
one or more signal processing elements.

18. The apparatus of claim 1 , wherein the illumination source comprises:
an illumination source configured to emit light modulated at a selected modulation frequency.

19. The apparatus of claim 1 , wherein the illumination source comprises:
an illumination source configured to emit pulsed light of a selected magnitude and pulse duration.

20. The apparatus of claim 1 , wherein the illumination source comprises:
at least one of a light emitting diode, a laser, a flash lamp or a shuttered lamp.

21. The apparatus of claim 1 , wherein the illumination unit includes one or more optical fiber bundles arranged to optically couple the output of the illumination source to the illumination area of the first surface of the p-n junction.

Assignees

• Kla Tencor Corp

Inventors

• Faifer Vladimir N
• Kelly-Morgan Ian Sierra Gabriel

Classifications

• G01R31/2648

  Characterising semiconductor materials (testing of materials or semi-finished products G01R31/2831; testing during manufacture H10P74/00) · CPC title

• G01R31/2656 Primary

  using non-ionising electromagnetic radiation, e.g. optical radiation · CPC title

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/2831

  Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates (G01R31/318511 takes precedence; testing during manufacture H10P74/00) · CPC title

• G01R31/308

  using non-ionising electromagnetic radiation, e.g. optical radiation {(investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00)} · CPC title