Cleaning liquid for lithography and method for forming wiring

Patent metadata

Field	Value
Publication number	US-9920286-B2
Application number	US-201615084295-A
Country	US
Kind code	B2
Filing date	Mar 29, 2016
Priority date	Jun 11, 2012
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

First claim

What is claimed is:

1. A method of cleaning a semiconductor device, comprising cleaning the semiconductor device with a cleaning liquid comprising an alkali or an acid, a solvent, and a silicon compound that generates a silanol group through hydrolysis, wherein the silicon compound, wherein the silicon compound is a alkoxysilane represented by the following formula (1) or a partial hydrolysis condensate thereof:
R 1 4-n Si(OR 2 ) n   (1)

wherein R1 represents an organic group, R2 represents an alkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 4.

2. The method of claim 1 , wherein the amount of the silicon compound is 5% by mass or less.

3. A method of cleaning a semiconductor device, comprising cleaning the semiconductor device with a cleaning liquid comprising an alkali, a solvent, and a silicon compound that generates a silanol group through hydrolysis, wherein the alkali includes at least one selected from the group consisting of a quaternary ammonium hydroxide and an alkanolamine.

4. The method of claim 3 , wherein the quaternary ammonium hydroxide is a compound represented by the following general formula (2):

wherein R3 to R6 each independently represents an alkyl, aryl, aralkyl or hydroxyalkyl group having 1 to 16 carbon atoms.

5. The method of claim 3 , wherein the amount of the quaternary ammonium hydroxide is 0.05 to 10% by mass.

6. The method of claim 3 , wherein the amount of the quaternary ammonium hydroxide is 0.1 to 5% by mass.

7. The method of claim 3 , wherein the amount of the alkanolamine is 0.05 to 20% by mass.

8. The method of claim 3 , wherein the amount of the alkanolamine is 0.1 to 10% by mass.

9. The method of claim 1 , wherein the alkali includes a combination of a quaternary ammonium hydroxide and an inorganic base.

10. The method of claim 1 , wherein the acid includes hydrofluoric acid.

11. The method of claim 1 , wherein the amount of the acid is 1 ppm by mass to 10% by mass.

12. The method of claim 1 , wherein the amount of the acid is 100 ppm by mass to 5% by mass.

13. The method of claim 1 , wherein the solvent includes an organic solvent or a combination of an organic solvent and water.

14. The method of claim 1 , wherein the solvent consists of an organic solvent.

15. The method of claim 1 , wherein the amount of the solvent is 1 to 99.7% by mass.

16. The method of claim 1 , wherein the cleaning liquid consists essentially of the alkali or the acid, the solvent, the silicon compound, optionally an anticorrosive agent and optionally a surfactant.

17. The method of claim 1 , wherein the semiconductor device is a multilayer laminate including a low dielectric constant layer.

18. The method of claim 1 , wherein the alkali includes at least one selected from the group consisting of a quaternary ammonium hydroxide and an alkanolamine.

19. The method of claim 3 , wherein the alkali includes a combination of a quaternary ammonium hydroxide and an inorganic base.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Kumagai Tomoya
• Eto Takahiro

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• G03F7/425 Primary

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• G03F7/423

  containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds · CPC title