Reflective optical element, and optical system of a microlithographic projection exposure apparatus

Patent metadata

Field	Value
Publication number	US-9915873-B2
Application number	US-201615160616-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	Nov 22, 2013
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A reflective optical element ( 50 ) having a substrate ( 52 ) and a multilayer system ( 51 ) that has a plurality of partial stacks ( 53 ), each with a first layer ( 54 ) of a first material and a second layer ( 55 ) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (D i ) and a layer thickness ratio (Γ i ), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (D i ). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (D i ) and layer thickness ratio (Γ i ), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

First claim

What is claimed is:

1. A reflective optical element, comprising a substrate and a multilayer system arranged on the substrate,
wherein the multilayer system has a plurality of partial stacks each comprising a first layer of a first material having a first thickness and at least one second layer of a second material having a second thickness, wherein the first material and the second material differ from one another in respective values of the real part of the refractive index at an operating wavelength of the reflective optical element, wherein each of the partial stacks has a respective partial stack thickness (D i ) and a respective layer thickness ratio (Γ i ), wherein the respective layer thickness ratio (Γ i ) is defined as a quotient of the thickness of the respective first layer and the respective partial stack thickness (D i );
wherein in a first section of the multilayer system, for at least one of: the respective partial stack thickness (D i ) and the respective layer thickness ratio (Γ i ), a mean square deviation from respective mean values therefor is nonzero and at least 10% less than in a second section of the multilayer system;
wherein for the first section of the multilayer system, the thicknesses a are such that for the first section |(D i −D i+1 )/D i |≤0.1;
wherein for the second section of the multilayer system, the respective partial stack thickness (D i ) and the respective layer thickness ratio (Γ i ) are such that the reflective optical element has a reflectivity R, a wavelength dependence of which in a wavelength interval of Δλ=0.5 nm has a PV value of less than 0.25, wherein the PV value is defined as PV=(R max _ rel −R min _ rel )/R max _ abs , wherein R max _ rel denotes a maximum reflectivity value in the wavelength interval Δλ, R min _ rel denotes a minimum reflectivity value in the wavelength interval Δλ, and R max _ abs denotes an absolute maximum reflectivity value; and
wherein the respective partial stack thickness (D i ) and the respective layer thickness ratio (Γ i ) in the multilayer system are such that a wavelength dependence of the reflectivity R of the reflective optical element in a wavelength interval of Δλ=0.5 nm has at least two local reflectivity extrema which differ from one another in reflectivity by at least 0.1%, relative to a larger value of the two local reflectivity extrema.

2. The reflective optical element as claimed in claim 1 , wherein, in the first section of the multilayer system, for at least one of: the respective partial stack thickness (D i ) and the respective layer thickness ratio (Γ i ), the mean square deviation from the respective mean values therefor is at least 20% less than in the second section of the multilayer system.

3. The reflective optical element as claimed in claim 2 , wherein, in the first section of the multilayer system, for at least one of: the respective partial stack thickness (D i ) and the respective layer thickness ratio (Γ i ), the mean square deviation from the respective mean values therefor is at least 50% less than in the second section of the multilayer system.

4. The reflective optical element as claimed in claim 1 , wherein the wavelength dependence of the reflectivity R in a wavelength interval of Δλ=0.5 nm has a PV value of less than 0.20.

5. The reflective optical element as claimed in claim 4 , wherein the wavelength dependence of the reflectivity R in a wavelength interval of Δλ=0.5 nm has a PV value of less than 0.15.

6. The reflective optical element as claimed in claim 1 , wherein the second section is arranged closer to the substrate than is the first section.

7. The reflective optical element as claimed in claim 1 , wherein the first section and the second section jointly form an entire multilayer system.

8. The reflective optical element as claimed in claim 1 , wherein the local reflectivity extrema differ from one another in reflectivity by at most 5%, relative to the larger value.

9. The reflective optical element as claimed in claim 1 , wherein the first material is selected from the group consisting of molybdenum (Mo), ruthenium (Ru) and rhodium (Rh).

10. The reflective optical element as claimed in claim 1 , wherein the second material is silicon (Si).

11. The reflective optical element as claimed in claim 1 , and configured for an operating wavelength of less than 30 nm.

12. The reflective optical element as claimed in claim 11 , configured for an operating wavelength of less than 15 nm.

13. An optical system of a microlithographic projection exposure apparatus, comprising a reflective optical element as claimed in claim 1 .

14. A microlithographic projection exposure apparatus, comprising an optical system as claimed in claim 13 .

15. A reflective optical element, comprising a substrate and a multilayer system arranged on the substrate,
wherein the multilayer system has a plurality of partial stacks each comprising a first layer of a first material and at least one second layer of a second material, wherein the first material and the second material differ from one another in respective values of the real part of the refractive index at an operating wavelength of the reflective optical element;
wherein the reflective optical element has a reflectivity R, the wavelength dependence of which in a wavelength interval of Δλ=0.5 nm has a PV value of less than 0.25, wherein the PV value is defined as PV=(R max _ rel −R min _ rel )/R max _ abs , wherein R max _ rel denotes a maximum reflectivity value in the wavelength interval Δλ, R min _ rel denotes a minimum reflectivity value in the wavelength interval Δλ, and R max _ abs denotes an absolute maximum reflectivity; and
wherein a wavelength dependence of the reflectivity R of the reflective optical element in a wavelength interval of Δλ=0.5 nm has at least two local extrema which differ from one another in reflectivity by at least 0.1% and by at most 5%, respectively relative to a larger value of the two local extrema.

16. The reflective optical element as claimed in claim 15 , wherein two local extrema differ from one another in reflectivity by at least 0.5%, relative to the larger value.

17. The reflective optical element as claimed in claim 15 , wherein the local extrema differ from one another in reflectivity by at most 2.5%, relative to the larger value.

18. The reflective optical element as claimed in claim 17 , wherein the local extrema differ from one another in reflectivity by at most 1%, relative to the larger value.

19. The reflective optical element as claimed in claim 15 , wherein the first material is selected from the group consisting of molybdenum (Mo), ruthenium (Ru) and rhodium (Rh).

20. The reflective optical element as claimed in claim 15 , wherein the second material is silicon (Si).

21. The reflective optical element as claimed in claim 15 , and configured for an operating wavelength of less than 30 nm.

22. The reflective optical element as claimed in claim 21 , configured for an operating wavelength of less than 15 nm.

23. An optical system of a microlithographic projection exposure apparatus, comprising a reflective optical element as claimed in claim 15 .

24. A microlithographic projection exposure apparatus, comprising an optical system as claimed in claim 23 .

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Enkisch Hartmut
• Paul Hans-Jochen
• Schicketanz Thomas
• Dier Oliver
• Weber Joern
• Grasse Christian
• Winter Ralf
• Strobel Sebastian

Classifications

• G02B5/0891

  Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06) · CPC title

• G02B5/0875

  the reflecting layers comprising two or more metallic layers · CPC title

• G03F7/7015 Primary

  Details of optical elements · CPC title

• G21K1/062

  Devices having a multilayer structure · CPC title

• G03F7/70316 Primary

  Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements · CPC title