Wafer processing method

Patent metadata

Field	Value
Publication number	US-9899262-B2
Application number	US-201615232404-A
Country	US
Kind code	B2
Filing date	Aug 9, 2016
Priority date	Aug 18, 2015
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A wafer formed from an SiC substrate having a first surface and a second surface is divided into individual device chips. A division start point formed by a laser has a depth corresponding to the finished thickness of each device chip along each division line formed on the first surface. The focal point of the laser beam is set inside the SiC substrate at a predetermined depth from the second surface, and the laser beam is applied to the second surface while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along a c-plane, thus forming a separation start point. An external force is applied to the wafer, thereby separating the wafer into a first wafer having the first surface and a second wafer having the second surface.

First claim

What is claimed is:

1. A wafer processing method for dividing a wafer into individual device chips, said wafer being formed from an SiC substrate having a first surface, a second surface opposite to said first surface, a c-axis extending from said first surface to said second surface, and a c-plane perpendicular to said c-axis, said wafer having a plurality of devices formed on said first surface of said SiC substrate so as to be separated by a plurality of crossing division lines, said wafer processing method comprising:
a division start point forming step of forming a division start point having a depth corresponding to the finished thickness of each device chip along each division line formed on said first surface;
a protective member providing step of providing a protective member on said first surface after performing said division start point forming step;
a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to said SiC substrate inside said SiC substrate at a predetermined depth from said second surface, which depth corresponds to a vertical position near said division start point, after performing said protective member providing step, and then applying said laser beam to said second surface as relatively moving said focal point and said SiC substrate to thereby form a modified layer parallel to said first surface and cracks extending from said modified layer along said c-plane, thus forming a separation start point; and
a wafer separating step of applying an external force to said wafer after performing said separation start point forming step, thereby separating said wafer into a first wafer having said first surface of said SiC substrate and a second wafer having said second surface of said SiC substrate at said separation start point;
said separation start point forming step including
a modified layer forming step of relatively moving the focal point of said laser beam in a first direction perpendicular to a second direction where said c-axis is inclined by an off angle with respect to a normal to said second surface and said off angle is formed between said second surface and said c-plane, thereby linearly forming said modified layer extending in said first direction, and
an indexing step of relatively moving said focal point in said second direction to thereby index said focal point by a predetermined amount.

2. The wafer processing method according to claim 1 , wherein said first wafer is divided into said individual device chips by separating said wafer into said first wafer and said second wafer in said wafer separating step.

3. The wafer processing method according to claim 2 , further comprising
a grinding step of grinding the back side of each device chip after performing said wafer separating step, thereby flattening the back side of each device chip.

4. The wafer processing method according to claim 1 , further comprising
a grinding step of grinding the back side of said first wafer after performing said wafer separating step, thereby flattening the back side of said first wafer and dividing said first wafer into said individual device chips.

Assignees

• Disco Corp

Inventors

• Hirata Kazuya
• Nishino Yoko

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10W46/503

  Located in scribe lines · CPC title