Electrically conductive thin films

US9899209B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9899209-B2
Application numberUS-201514870265-A
CountryUS
Kind codeB2
Filing dateSep 30, 2015
Priority dateDec 8, 2014
Publication dateFeb 20, 2018
Grant dateFeb 20, 2018

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (A α Ti 1−α )O 2+δ   Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.

First claim

Opening claim text (preview).

What is claimed is: 1. An electrically conductive thin film comprising: a plurality of nanosheets comprising a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure such that neighboring nanosheets of the plurality of nanosheets can be slid next to each other: (A α Ti 1−α )O 2+δ   Chemical Formula 1 wherein, in the Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1, and wherein the doped titanium oxide represented by Chemical Formula 1 has a different crystal system than an anatase crystal system and a rutile crystal system. 2. The electrically conductive thin film of claim 1 , wherein the conductive thin film has light transmittance for light having a wavelength of 550 nanometers of greater than or equal to about 80% at a thickness of less than or equal to 10 nanometers. 3. The electrically conductive thin film of claim 1 , wherein the doped titanium oxide is represented by the formula (A α Ti 1−α )O 2.31 wherein A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. 4. The electrically conductive thin film of claim 1 , wherein a content of the dopant is less than about 13 atomic percent, based on a total content of titanium. 5. The electrically conductive thin film of claim 1 , wherein the plurality of nanosheets have a longest average length of greater than or equal to 0.2 micrometers. 6. The electrically conductive thin film of claim 1 , wherein the plurality of nanosheets contact each other to provide an electrical connection. 7. An electronic device comprising the electrically conductive thin film of claim 1 . 8. The electronic device of claim 7 , wherein the electronic device is a flat panel display, a touch screen panel, a solar cell, an e-window, an electrochromic mirror, a heat mirror, a transparent transistor, or a flexible display. 9. A method of manufacturing an electrically conductive thin film, the method comprising: providing a doped titanium dioxide including at least one dopant selected from Nb, Ta, V, W, Cr, and Mo; mixing the doped titanium dioxide, potassium carbonate, lithium carbonate, and a molybdenum oxide flux in a selected ratio to obtain a lithium potassium titanate represented by Chemical Formula 2 and having a layered crystal structure: K x (A α Ti 1−α ) 1.73 Li b O 4   Chemical Formula 2 wherein A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, α is greater than 0 and less than 1, x is greater than 0 and less than or equal to 0.8, and b is greater than 0 and less than or equal to 0.27; contacting the lithium potassium titanate with an acid solution to obtain an acid-exchanged titanate; contacting the acid-exchanged titanate with an aqueous alkylammonium hydroxide solution to obtain a plurality of nanosheets comprising a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure such that neighboring nanosheets of the plurality of nanosheets can be slid next to each other: (A α Ti 1−α )O 2+δ   Chemical Formula 1 wherein δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1; and forming a thin film including a plurality of nanosheets of the doped titanium oxide represented by Chemical Formula 1 to manufacture the electrically conductive thin film, and wherein the doped titanium oxide represented by Chemical Formula 1 has a different crystal system than an anatase crystal system and a rutile crystal system. 10. The method of claim 9 , wherein the lithium potassium titanate has a longest diameter of greater than or equal to about 10 μm. 11. The method of claim 9 , wherein the titanium oxide is represented by (A α Ti 1-α ) 1.73 O 4 , and a content of the dopant metal is less than about 13 atomic percent, based on a total content of titanium. 12. The method of claim 9 , wherein the nanosheets have a longest average length of greater than or equal to about 0.2 micrometer. 13. The method of claim 9 , wherein the lithium potassium titanate belongs to an orthorhombic system and has the space group Cmcm. 14. The electrically conductive thin film of claim 1 , wherein the doped titanium oxide represented by Chemical Formula 1 is an ion-exchange product of a compound.

Assignees

Inventors

Classifications

  • the material having a perovskite structure, e.g. BaTiO3 · CPC title

  • the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

  • the material containing titanium, e.g. TiO2 · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

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What does patent US9899209B2 cover?
An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (A α Ti 1−α )O 2+δ   Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P14/69394. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).