Collision ionization ion source

US9899181B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-9899181-B1
Application numberUS-201715405139-A
CountryUS
Kind codeB1
Filing dateJan 12, 2017
Priority dateJan 12, 2017
Publication dateFeb 20, 2018
Grant dateFeb 20, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A collision ionization ion source comprising: A pair of stacked plates, sandwiched about an intervening gap; An input zone (aperture), provided in a first of said plates, to admit an input beam of charged particles to said gap; An output zone (aperture), located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; A gas space, between said input and output zones, in which gas can be ionized by said input beam so as to produce said ions; A supply duct in said gap, for supplying a flow of said gas to said gas space, and comprising: An emergence orifice, opening into said gas space; An entrance orifice, connectable to a gas supply, wherein said duct comprises at least one transition region between said entrance orifice and said emergence orifice in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value.

First claim

Opening claim text (preview).

The invention claimed is: 1. A collision ionization ion source comprising: a pair of stacked plates, sandwiched about an intervening gap; an input zone, provided in a first of said plates, to admit an input beam of charged particles to said gap; an output zone, located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; a gas space, between said input and output zones, in which gas can be ionized by said input beam so as to produce said ions; and a supply duct in said gap, for supplying a flow of said gas to said gas space, and comprising: an emergence orifice, opening into said gas space; and an entrance orifice, connectable to a gas supply, said duct comprising at least one transition region between said entrance orifice and said emergence orifice and in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value. 2. An ion source according to claim 1 , in which said height decrease in said transition region has a form selected from the group consisting of: a single step; a series of steps; a tapering transition, and combinations hereof. 3. An ion source according to claim 2 , wherein a height ratio Q of said first height value to said second height value is greater than 25, preferably greater than 50, and even more preferably greater than 75. 4. An ion source according to claim 2 , wherein a plurality of supply ducts open into said gas space. 5. An ion source according to claim 2 , wherein said plates are stacked, aligned and adjoined to one another using a chip bonding technique. 6. A charged particle focusing device comprising: a particle source, for producing a charged-particle beam; a specimen holder, for holding a specimen in an irradiation position; and an optical column, for directing said beam so as to irradiate said specimen, characterized in that said particle source comprises an ion source as claimed in claim 2 . 7. A charged particle focusing device according to claim 6 , which device is selected from the group consisting of: a charged particle microscope; and a lithography imager. 8. An ion source according to claim 1 , wherein a height ratio Q of said first height value to said second height value is greater than 25, preferably greater than 50, and even more preferably greater than 75. 9. An ion source according to claim 8 , wherein a plurality of supply ducts open into said gas space. 10. An ion source according to claim 8 , wherein said plates are stacked, aligned and adjoined to one another using a chip bonding technique. 11. A charged particle focusing device comprising: a particle source, for producing a charged-particle beam; a specimen holder, for holding a specimen in an irradiation position; and an optical column, for directing said beam so as to irradiate said specimen, characterized in that said particle source comprises an ion source as claimed in claim 8 . 12. A charged particle focusing device according to claim 11 , which device is selected from the group consisting of: a charged particle microscope; and a lithography imager. 13. An ion source according to claim 1 , wherein a plurality of supply ducts open into said gas space. 14. An ion source according to claim 13 , wherein said plates are stacked, aligned and adjoined to one another using a chip bonding technique. 15. A charged particle focusing device comprising: a particle source, for producing a charged-particle beam; a specimen holder, for holding a specimen in an irradiation position; and an optical column, for directing said beam so as to irradiate said specimen, characterized in that said particle source comprises an ion source as claimed in claim 13 . 16. An ion source according to claim 1 , wherein said plates are stacked, aligned and adjoined to one another using a chip bonding technique. 17. A charged particle focusing device comprising: a particle source, for producing a charged-particle beam; a specimen holder, for holding a specimen in an irradiation position; and an optical column, for directing said beam so as to irradiate said specimen, characterized in that said particle source comprises an ion source as claimed in claim 16 . 18. A charged particle focusing device comprising: a particle source, for producing a charged-particle beam; a specimen holder, for holding a specimen in an irradiation position; and an optical column, for directing said beam so as to irradiate said specimen, characterized in that said particle source comprises an ion source as claimed in claim 1 . 19. A charged particle focusing device according to claim 18 , which device is selected from the group consisting of: a charged particle microscope; and a lithography imager. 20. A charged particle focusing device according to claim 18 , which device is selected from the group consisting of: a charged particle microscope; and a lithography imager.

Assignees

Inventors

Classifications

  • Electron or ion microscopes; Electron or ion diffraction tubes · CPC title

  • H01J37/08Primary

    Ion sources; Ion guns · CPC title

  • H01J27/20Primary

    using particle {beam} bombardment, e.g. ionisers · CPC title

  • Ion deflecting means, e.g. ion gates · CPC title

  • H01J49/005Primary

    by collision with gas, e.g. by introducing gas or by accelerating ions with an electric field · CPC title

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What does patent US9899181B1 cover?
A collision ionization ion source comprising: A pair of stacked plates, sandwiched about an intervening gap; An input zone (aperture), provided in a first of said plates, to admit an input beam of charged particles to said gap; An output zone (aperture), located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; …
Who is the assignee on this patent?
Fei Co
What technology area does this patent fall under?
Primary CPC classification H01J37/08. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).