Wide-band acoustically coupled thin-film BAW filter

Patent metadata

Field	Value
Publication number	US-9893712-B2
Application number	US-201113879028-A
Country	US
Kind code	B2
Filing date	Oct 14, 2011
Priority date	Oct 14, 2010
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.

First claim

The invention claimed is:

1. An acoustically coupled thin-film Bulk Acoustic Wave (BAW) filter, comprising;
a piezoelectric layer,
an input-port on the piezoelectric layer changing electrical signal into an acoustic wave, and
an output-port on the piezoelectric layer changing acoustic signal into electrical signal,
wherein the ports include electrodes positioned such that acoustic coupling is achieved,
the filter is capable of operating in the first order thickness-extensional TE1 mode, and
wherein mass loading by the electrodes, which is based on thickness and material density of the electrodes, is such that the frequency difference between the k=0 frequency of the electrode region's TE1 mode and the outside region's TS2 mode is below a defined threshold,
wherein the filter has an interdigital electrode structure with two ports, such that fingers of the interdigital electrode structure are connected alternatingly to the input-port and the output-port and the electrode width W is such that more than one half-wavelength of the lateral acoustic wave's wavelength cannot fit within the electrode width.

2. A filter in accordance with claim 1 , wherein the k=0 frequency of the outside region's TS2 mode is between 93% and 99.9 of the electrode region's TE1 cutoff frequency.

3. A filter in accordance with claim 2 , wherein the k=0 frequency of the outside region's TS2 mode is between 98% and 99.9% of the electrode region's TE1 cutoff frequency.

4. A filter in accordance with claim 1 , wherein the electrodes are positioned such that acoustic vibration in the lateral direction from one electrode to the other acoustically couples the electrodes.

5. A filter in accordance with claim 1 , wherein the electrode topology is such that gap width G ensures good coupling at the even mode.

6. A filter in accordance with claim 5 , wherein the gap width is between 20% and 120% of the evanescent acoustic wave's decay length in the gap at the desired even resonance mode, where the wave's decay length is expressed as the length at which amplitude A=A0*1/e of the original amplitude A0.

7. A filter in accordance with claim 1 , wherein the electrode width W is smaller than the lateral acoustic wave's wavelength λodd at the desired odd resonance mode.

8. A filter in accordance with claim 1 , wherein the number of electrodes N, electrode width W and gap width G are designed such that the desired wavelength of the lateral acoustic wave at the even mode resonance frequency is achieved.

9. A filter in accordance with claim 8 , wherein N*W+N*G=λeven/2, where λeven is the wavelength of the lateral acoustic wave at the even mode resonance frequency, and that the highest-order mode trapped in the structure is the desired odd mode resonance.

10. A filter in accordance with claim 1 , wherein the electrode width W is such that the wavelength of the lateral acoustic wave at the desired odd mode resonance frequency, λodd, is obtained.

11. A filter in accordance with claim 10 , wherein W is between 25% and 50% of λ odd .

12. A filter in accordance with claim 1 , wherein matching to the system impedance level is achieved, while retaining a desired loss level within the passband by a combination of number of electrodes N, electrode width W, and electrode length L.

13. A filter in accordance with claim 1 , wherein the piezoelectric layer is formed on an acoustic Bragg structure formed as a thin film stack or on an air-gap structure.

14. A filter in accordance with claim 1 , wherein one or more resonators are added to the filter in parallel and/or series.

15. A filter in accordance with claim 11 , wherein one or more of the resonators are coupled before and/or after the filter.

16. A filter in accordance with claim 1 , wherein the mass loading by the electrodes comprises of a thickness of at least 5.7 percent of a thickness of the piezoelectric layer.

17. A filter in accordance with claim 1 , wherein the filter is capable of operating in the TE1 mode in a gigahertz (GHz) frequency range.

Assignees

• Meltaus Johanna
• Pensala Tuomas
• Teknologian Tutkimuskeskus Vtt Oy

Inventors

• Meltaus Johanna
• Pensala Tuomas

Classifications

• H03H9/547 Primary

  Notch filters, e.g. notch BAW or thin film resonator filters · CPC title

• H03H9/564 Primary

  implemented with thin-film techniques · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title