Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same

Patent metadata

Field	Value
Publication number	US-9892959-B2
Application number	US-201615197714-A
Country	US
Kind code	B2
Filing date	Jun 29, 2016
Priority date	Jul 4, 2012
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method.

First claim

What is claimed is:

1. A method for patterning a mesoporous inorganic oxide film, the method comprising:
forming a mesoporous inorganic oxide film using a neutral composition containing inorganic oxide particles; and
forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide film,
wherein in the pattern formation, the inorganic oxide film is covered with the elastic stamp, maintained, and then dried; the elastic stamp is separated; and the inorganic oxide film is subjected to a calcination process, and
wherein the inorganic oxide particles have a particle size of 2 nm to 60 μm.

2. The method for patterning a mesoporous inorganic oxide film according to claim 1 , wherein the inorganic oxide is an oxide containing a metal element selected from the group consisting of titanium (Ti), zinc (Zn), niobium (Nb), tungsten (W), zirconium (Zr), strontium (Sr), indium (In), lanthanum (La), vanadium (V), molybdenum (Mo), tin (Sn), magnesium (Mg), aluminum (Al), yttrium (Y), scandium (Sc), samarium (Sm), gallium (Ga), and combinations thereof.

3. The method for patterning a mesoporous inorganic oxide film according to claim 1 , wherein the elastic stamp for pattern formation is a stamp made of a material selected from the group consisting of polydimethylsiloxane, silicone rubber, polyethylene terephthalate, polycarbonate, polyimide, polyethylene, polymethyl methacrylate, polystyrene, polylactic-co-glycolic acid, hydrogel, and mixtures thereof.

4. The method for patterning a mesoporous inorganic oxide film according to claim 1 , wherein the calcination process is carried out at 200° C. to 450° C.

Assignees

• Univ Yonsei Iacf
• Industry Academic Corporation Foundation Yonsei Univ

Inventors

• Kim Eun Kyoung
• Kim Jong Hak
• Kim Jeong Hun
• Koh Jong Kwan
• Na Jong Beom
• Park Chi Hyun

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10W20/091 Primary

  by printing or stamping · CPC title

• H10P10/00

  Bonding of wafers, substrates or parts of devices · CPC title

• H01G9/204

  comprising zinc oxides, e.g. ZnO (H01G9/2036 takes precedence) · CPC title