Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same

Patent metadata

Field	Value
Publication number	US-9406447-B2
Application number	US-201313935469-A
Country	US
Kind code	B2
Filing date	Jul 3, 2013
Priority date	Jul 4, 2012
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method.

First claim

What is claimed is:

1. A method for producing a photoelectrode, the method comprising:
forming a mesoporous inorganic oxide layer on a conductive substrate using a composition containing neutral mesoporous inorganic oxide particles;
forming a pattern on the mesoporous inorganic oxide layer using an elastic stamp for pattern formation;
adsorbing a dye to the mesoporous inorganic oxide layer on which the pattern is formed and
injecting a hole transfer material into the mesoporous inorganic oxide layer in which the dye is adsorbed.

2. The method for producing a photoelectrode according to claim 1 , wherein the inorganic oxide is an oxide containing a metal element selected from the group consisting of titanium (Ti), zinc (Zn), niobium (Nb), tungsten (W), zirconium (Zr), strontium (Sr), indium (In), lanthanum (La), vanadium (V), molybdenum (Mo), tin (Sn), magnesium (Mg), aluminum (Al), yttrium (Y), scandium (Sc), samarium (Sm), gallium (Ga), and combinations thereof.

3. The method for producing a photoelectrode according to claim 1 , wherein the inorganic oxide particles have a particle size of 2 nm to 60 μm.

4. The method for producing a photoelectrode according to claim 1 , wherein the elastic stamp for pattern formation is a stamp made of a material selected from the group consisting of polydimethylsiloxane, silicone rubber, polyethylene terephthalate, polycarbonate, polyimide, polyethylene, polymethyl methacrylate, polystyrene, polylactic-co-glycolic acid, hydrogel, and mixtures thereof.

5. The method for producing a photoelectrode according to claim 1 , further comprising forming an interface adhesive layer on a conductive substrate using a composition containing a precursor of the inorganic oxide, before the process of forming a mesoporous inorganic oxide layer.

6. The method for producing a photoelectrode according to claim 1 , wherein the pattern formation is carried out by forming a pattern on the mesoporous inorganic oxide layer using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide layer.

7. The method for producing a photoelectrode according to claim 1 , wherein the injection of a hole transfer material involves a process of allowing a composition containing a monomer of an electroconductive polymer for forming a hole transfer material to penetrate into the patterned inorganic oxide layer, and then thermally polymerizing the monomer to form an electroconductive polymer for hole transfer material.

8. The method for producing a photoelectrode according to claim 1 , further comprising injecting an additive containing a non-volatile ionic liquid and an ion salt, after the injection of a hole transfer material.

Assignees

• Industry-Academic Cooperation Foundation Yonsei Univ

Inventors

• Kim Eun Kyoung
• Kim Jong Hak
• Kim Jeong Hun
• Koh Jong Kwan
• Na Jong Beom
• Park Chi Hyun

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10W20/091 Primary

  by printing or stamping · CPC title

• H10P10/00

  Bonding of wafers, substrates or parts of devices · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title